NDLI: Consistent Relationship Between the Tunnel Magnetoresistance of CoFeB/MgO/CoFeB Junctions and X-Ray Diffraction Properties

Content Provider	IEEE Xplore Digital Library
Author	Il-Jae Shin Byoung-Chul Min Jin-Pyo Hong Kyung-Ho Shin
Copyright Year	1965
Abstract	We have investigated the effect of Ar pressure during MgO sputtering on the tunnel magnetoresistance (TMR) and resistance area (RA) product of CoFeB/MgO/CoFeB magnetic tunnel junctions (MTJs). The TMR of MTJs with a thin MgO tunnel barrier deposited at different Ar pressures (1.3, 4, 10, and 25 mTorr) shows a consistent relationship with X-ray diffraction (XRD) properties of thick MgO films deposited with the same conditions. The deposition of the MgO-barrier at 1.3 mTorr results in a low TMR ratio and a high RA product due to the disordered MgO barrier and the oxidation of the bottom electrode of the MTJ, while the deposition at 25 mTorr results in a rough MgO barrier, and thereby gives rise to a large shift of switching field of the free layer due to the orange-peel coupling.
Sponsorship	IEEE Magnetics Society
Starting Page	2393
Ending Page	2395
Page Count	3
File Size	115318
File Format	PDF
ISSN	00189464
Volume Number	45
Issue Number	6
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2009-06-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Tunneling magnetoresistance X-ray diffraction Magnetic properties Magnetic tunneling Argon Sputtering X-ray scattering Magnetic films Oxidation Electrodes tunnel magnetoresistance Magnetic tunnel junction MgO rf sputtering
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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230% room temperature magnetoresistance in CoFeB/MgO/CoFeB magnetic tunnel junctions

Substrate Biasing Effect during MgO Deposition in CoFeB/MgO/CoFeB MTJs

Effect of Adjacent Layers on Crystallization and Magnetoresistance in CoFeB/MgO/CoFeB Magnetic Tunnel Junction

Ultra-Low Resistance-Area-Product in CoFeB/MgO/CoFeB Magnetic Tunnel Junctions

Magnetic and Electrical Properties of Magnetic Tunnel Junctions With Radical Oxidized MgO Barriers

Tunnel Magnetoresistance Properties of Double MgO-Barrier Magnetic Tunnel Junctions With Different Free-Layer Alloy Compositions and Structures

Influence of Diffused Boron Into MgO Barrier on Pinhole Creation in CoFeB/MgO/CoFeB Magnetic Tunnel Junctions

Effect of Buffer Layer Texture on the Crystallization of CoFeB and on the Tunnel Magnetoresistance in MgO Based Magnetic Tunnel Junctions

Consistent Relationship Between the Tunnel Magnetoresistance of CoFeB/MgO/CoFeB Junctions and X-Ray Diffraction Properties

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