NDLI: Inverse Class-F AlGaN/GaN HEMT Microwave Amplifier Based on Lumped Element Circuit Synthesis Method

Content Provider	IEEE Xplore Digital Library
Author	Abe, Y. Ishikawa, R. Honjo, K.
Copyright Year	1963
Abstract	A lumped element design method considering more than third-order higher harmonic frequencies for a microwave AlGaN/GaN HEMT inverse class-F amplifier has been developed. The load circuit consists of a series reactance network having zero impedance at the odd order harmonic frequencies and poles at the even order higher harmonic frequencies as well as a shunt reactance network having zero impedance at the odd order harmonic frequencies. A fabricated AlGaN/GaN HEMT inverse class-F amplifier delivered a power-added efficiency of 76.3% and a drain efficiency of 78.3% at 879 MHz.
Sponsorship	IEEE Microwave Theory and Techniques Society
Starting Page	2748
Ending Page	2753
Page Count	6
File Size	1048232
File Format	PDF
ISSN	00189480
Volume Number	56
Issue Number	12
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2008-12-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Aluminum gallium nitride Gallium nitride HEMTs Microwave theory and techniques Microwave amplifiers Circuit synthesis Frequency Poles and zeros Impedance Design methodology microwave Amplifier high efficiency inverse class-F lumped element
Content Type	Text
Resource Type	Article
Subject	Condensed Matter Physics Electrical and Electronic Engineering Radiation

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Inverse Class-F AlGaN/GaN HEMT Microwave Amplifier Based on Lumped Element Circuit Synthesis Method