NDLI: 3–10-GHz Ultra-Wideband Low-Noise Amplifier Utilizing Miller Effect and Inductive Shunt

Content Provider	IEEE Xplore Digital Library
Author	Yu-Tso Lin Hsiao-Chin Chen Tao Wang Yo-Sheng Lin Shey-Shi Lu
Copyright Year	1963
Abstract	In this paper, we demonstrate an SiGe HBT ultra-wideband (UWB) low-noise amplifier (LNA), achieved by a newly proposed methodology, which takes advantage of the Miller effect for UWB input impedance matching and the inductive shunt-shunt feedback technique for bandwidth extension by pole-zero cancellation. The SiGe UWB LNA dissipates 25.8-mW power and achieves S₁₁ below -10 dB for frequencies from 3 to 14 GHz (except for a small range from 10 to 11 GHz, which is below -9 dB), flat S₂₁ of 24.6 plusmn 1.5 dB for frequencies from 3 to 11.6 GHz, noise figure of 2.5 and 5.8 dB at 3 and 10 GHz, respectively, and good phase linearity property (group-delay variation is only plusmn28 ps across the entire band). The measured 1-dB compression point (P₁ dB) and input third-order intermodulation point are -25.5 and -17 dBm, respectively, at 5.4 GHz.
Sponsorship	IEEE Microwave Theory and Techniques Society
Starting Page	1832
Ending Page	1843
Page Count	12
File Size	947076
File Format	PDF
ISSN	00189480
Volume Number	55
Issue Number	9
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2007-09-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Ultra wideband technology Low-noise amplifiers Feedback Silicon germanium Germanium silicon alloys Frequency Heterojunction bipolar transistors Impedance matching Bandwidth Noise figure ultra-wideband (UWB) HBT inductive feedback low-noise amplifier (LNA) Miller effect SiGe
Content Type	Text
Resource Type	Article
Subject	Condensed Matter Physics Electrical and Electronic Engineering Radiation

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