NDLI: Thin SiON Film Grown at Low Temperature (400<tex>$^circhboxC$</tex>) by Microwave-Excited High-Density<tex>$hboxKr/hboxO_2/hboxN

Content Provider	IEEE Xplore Digital Library
Author	Ohtsubo, K. Saito, Y. Hirayama, M. Sugawa, S. Aharoni, H. Ohmi, T.
Copyright Year	1973
Abstract	It is demonstrated that thin oxynitride (SiON) films can be grown on single crystal (100) silicon substrates at a growth temperature of 400 degC, yielding high-quality electrical insulating and reliability properties which are compatible with the IC industry requirements. This is a drastic reduction in the growth temperature with respect to thermally grown SiO₂ films at 1000 degC, which are conventionally used in semiconductor device fabrications. The realization of this growth method is made through the employment of high-density Kr/O₂/N₂ microwave-excited (2.45 GHz) plasma techniques. It is found that the electrical properties of the oxynitride films are strongly affected by the amount of the N₂ added to the process gas mixture. For a properly selected mixture, the characteristics of the plasma-grown oxynitride films are shown to exhibit clear advantages with respect to those of SiO₂ gate insulator films, grown by a conventional dry oxidation at 1000 degC, presently used in the IC industry. They demonstrate higher charge-to-breakdown (Q_BD) values, lower stress-induced leakage currents, and significantly lower gate voltage shifts (DeltaV _G). Accordingly, it is suggested that oxynitride films grown by the Kr/O₂/N₂ plasma technique are promising candidates for gate insulator films in scaled down MOS devices for the realization of future ultralarge-scale integration
Sponsorship	IEEE Nuclear and Plasma Sciences Society
Starting Page	2443
Ending Page	2449
Page Count	7
File Size	386377
File Format	PDF
ISSN	00933813
Volume Number	34
Issue Number	5
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2006-10-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Plasma temperature Semiconductor films Plasma properties Plasma devices Silicon Substrates Dielectrics and electrical insulation Semiconductor devices Fabrication Employment stress-induced leakage current (SILC) Charge-to-breakdown low temperature oxynitride film
Content Type	Text
Resource Type	Article
Subject	Nuclear and High Energy Physics Condensed Matter Physics

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