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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Takeuchi, T. Banno, N. Tagawa, K. Kobayashi, T. Tsuchiya, K. Tatsumi, N. Kitaguchi, H. Fukuzaki, T. Kosuge, M. Wada, H. Iijima, Y. Kikuchi, A. Inoue, K. |
| Copyright Year | 2002 |
| Abstract | We have examined the critical current I/sub c/ and n-values of RHQT processed Nb/sub 3/Al conductors at 4.2 K in a wide range of fields from 14.5 to 25 T in relation to the microstructures obtained. For a point and a tail of Cu-clad rectangular conductor used for a winding, the n-values were determined by fitting the voltage over a taps spacing of 110 or 220 mm to a relationship of V = CI/sup n/, in a range from 10/sup -5/ to 10/sup -4/ V/m. Such n-values were almost the same with each other, indicating the uniformity of a 370 m length of RHQT Nb/sub 3/Al conductor as the I/sub c/ consistency does. The n-value increased monotonously with decreasing a field from 25 T to 18 T, but got saturated to be around 35 at 4.2 K in fields less than 18 T. The n-value at 21 T and 4.2 K, corresponding to 23.5 T and 1.8 K, was about 25, and confirmed to be large enough for NMR uses. |
| Sponsorship | Council on Superconductivity Appl. Superconductivity Conference Inc MIT |
| Starting Page | 961 |
| Ending Page | 966 |
| Page Count | 6 |
| File Size | 406474 |
| File Format | |
| ISSN | 10518223 |
| Volume Number | 14 |
| Issue Number | 2 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2004-06-01 |
| Publisher Place | U.S.A. |
| Access Restriction | One Nation One Subscription (ONOS) |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Microstructure Superconductivity Nuclear magnetic resonance Conductors Superconducting magnets Voltage Critical current Niobium Materials science and technology Magnetic resonance |
| Content Type | Text |
| Resource Type | Article |
| Subject | Condensed Matter Physics Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering |
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