NDLI: High-speed large-area inverted InGaAs thin-film metal-semiconductor-metal photodetectors

Content Provider	IEEE Xplore Digital Library
Author	Sang-Woo Seo Sang-Yeon Cho Sa Huang Jeng Jung Shin Jokerst, N.M. Brown, A.S. Brooke, M.A.
Copyright Year	1995
Abstract	Inverted metal-semiconductor-metal (I-MSM) photodetectors, which are thin-film MSMs with the growth substrate removed and fingers on the bottom of the device (to eliminate finger shadowing to enhance responsivity), are reported herein for high-speed high-efficiency large-area photodetectors. Reported herein are the highest speed vertically addressed large-area (40-/spl mu/m diameter) photodetectors reported to date, which operate with a responsivity of 0.16 A/W and a full-width half-maximum of less than 5 ps. Materials, fabrication processes, heterogeneous integration, and characterization of I-MSM photodetectors are presented in this paper, as measured using a fiber-based electrooptic sampling system. These large-area photodetectors are ideal for vertically addressed high-speed optical links which need alignment-tolerant packaging for cost sensitive applications.
Sponsorship	IEEE Lasers and Electro-Optics Society
Starting Page	686
Ending Page	693
Page Count	8
File Size	657440
File Format	PDF
ISSN	1077260X
Volume Number	10
Issue Number	4
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2004-07-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Indium gallium arsenide Transistors Photodetectors Fingers Thin film devices Substrates Shadow mapping Optical materials Optical device fabrication Sampling methods
Content Type	Text
Resource Type	Article
Subject	Atomic and Molecular Physics, and Optics Electrical and Electronic Engineering

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