NDLI: A novel drain current I-V model for MESFET

Content Provider	IEEE Xplore Digital Library
Author	Ban-Leong Ooi Ma, J.Y. Leong, M.S.
Copyright Year	1963
Abstract	The conventional approach for modeling the dc I-V characteristics of a MESFET transistor usually adopts the hyperbolic tangent dependence on V/sub ds/. On the contrary, our new empirical model describes the device drain current as a polynomial of effective gate-source voltage V/sub eff/. The derived model is capable of accurately modelling the subthreshold effect and the device current-voltage behavior at different operating regions, in particular, the device operation around the pinchoff region. Measured and modeled results of a 0.5-/spl mu/m gatelength MESFET device are compared and good agreement has been obtained. Comparisons between the proposed model, Curtice model, Chalmers model, and Parker model are also made in this paper. In addition, a single-stage class-AB amplifier was built with a commercial high-power MESFET transistor to verify the new model.
Sponsorship	IEEE Microwave Theory and Techniques Society
Starting Page	1188
Ending Page	1192
Page Count	5
File Size	254870
File Format	PDF
ISSN	00189480
Volume Number	50
Issue Number	4
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2002-04-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	MESFETs Voltage Semiconductor device modeling Polynomials High power amplifiers Equations Packaging FETs Data mining Software design
Content Type	Text
Resource Type	Article
Subject	Condensed Matter Physics Electrical and Electronic Engineering Radiation

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1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
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3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
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