NDLI: A high-power and high-gain X-band Si/SiGe/Si heterojunction bipolar transistor

Content Provider	IEEE Xplore Digital Library
Author	Zhenqiang Ma Mohammadi, S. Bhattacharya, P. Katehi, L.P.B. Alterovitz, S.A. Ponchak, G.E.
Copyright Year	1963
Abstract	A double mesa-type Si/SiGe/Si (n-p-n) heterojunction bipolar transistor (HBT) with record output power and power gain at X-band (8.4 GHz) is demonstrated. The device exhibits collector breakdown voltage BV/sub CBO/ of more than 24 V and a maximum oscillation frequency f/sub max/ of 37 GHz. Under continuous-wave operation and class-AB biasing conditions, 24.2-dBm (263-mW) RF output power with concurrent gain of 6.9 dB is measured at the peak power-added efficiency (28.1%) from a single ten-emitter fingers (780-/spl mu/m/sup 2/ emitter area) common-base HBT. The maximum RF output power achieved is as high as 26.3 dBm (430 mW in saturation) and the maximum collector efficiency is 36.9%. The low collector doping concentration together with the device layout result in negligible thermal effects across the transistor and greatly simplifies the large-signal modeling. The conventional Gummel-Poon model yields good agreement between the modeled and the measured de characteristics and small-signal S-parameters. The accuracy of the model is further validated with the measured power performance of the SiGe power HBT at X-band. These results set a benchmark for power performance for SiGe-based HBTs and indicate promise for their implementation in efficient X-band power-amplifier circuits.
Sponsorship	IEEE Microwave Theory and Techniques Society
Starting Page	1101
Ending Page	1108
Page Count	8
File Size	337567
File Format	PDF
ISSN	00189480
Volume Number	50
Issue Number	4
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2002-04-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Silicon germanium Germanium silicon alloys Heterojunction bipolar transistors Semiconductor process modeling Power generation Radio frequency Power measurement Area measurement Gain measurement Fingers
Content Type	Text
Resource Type	Article
Subject	Condensed Matter Physics Electrical and Electronic Engineering Radiation

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