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Content Provider | IEEE Xplore Digital Library |
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Author | Tsuchiya, Y. Le, S. Sano, M. Uesugi, T. Araki, S. Morita, H. Matsuzaki, M. |
Copyright Year | 1965 |
Abstract | In this paper, RuRhMn-based and PtMn-based spin valves with magnetic oxide layer (MOL) inserted in the free layer, pinned layer, or both layers were studied. Both magnetoresistance (MR) ratio and /spl Delta/R/sub sq/ were increased in these spin valves, due to the insertion of MOL. Theoretical calculation based on semi-classical Boltzmann equation for transport indicated that the enhancement of MR ratio can be attributed to the strong specular scattering at interface with MOL. PtMn specular spin valves are more thermally stable than RuRhMn spin valves. Their thermal stability can be further improved by using a synthetic pinned layer with MOL, where the effective exchange field degrades less than 20% when the temperature is increased up to 350/spl deg/C. |
Sponsorship | IEEE Magnetics Society |
Starting Page | 2557 |
Ending Page | 2559 |
Page Count | 3 |
File Size | 54868 |
File Format | |
ISSN | 00189464 |
Volume Number | 36 |
Issue Number | 5 |
Language | English |
Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
Publisher Date | 2000-09-01 |
Publisher Place | U.S.A. |
Access Restriction | One Nation One Subscription (ONOS) |
Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
Subject Keyword | Spin valves Magnetoresistance Thermal stability Temperature X-ray scattering Magnetic field measurement Cobalt alloys Iron alloys Nickel alloys Boltzmann equation |
Content Type | Text |
Resource Type | Article |
Subject | Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering |
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