NDLI: Characteristics of deep-submicrometer MOSFET and its empirical nonlinear RF model

Content Provider	IEEE Xplore Digital Library
Author	Yi-Jen Chan Chia-Hung Huang Chung-Chian Weng Boon-Khim Liew
Copyright Year	1963
Abstract	Si MOSFET's with submicrometer gate length were fabricated and characterized by RF evaluation. Devices with a 0.25 /spl mu/m gate length demonstrated a g/sub m/ of 258 mS/mm, an f/sub T/ of 28 GHz, and a minimum noise figure of 1.8 dB at 900 MHz. A nonlinear device model was constructed based on the measured results. Empirical equations are used to represent the nonlinear elements such as g/sub m/, C/sub gs/, C/sub gd/, C/sub ds/, and R/sub out/. These nonlinear elements, together with device parasitics, provide designers with a comprehensive model for using these devices for RF circuits.
Sponsorship	IEEE Microwave Theory and Techniques Society
Starting Page	611
Ending Page	615
Page Count	5
File Size	188553
File Format	PDF
ISSN	00189480
Volume Number	46
Issue Number	5
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1998-05-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	MOSFET circuits Radio frequency Nonlinear equations Microwave devices Radiofrequency integrated circuits Integrated circuit technology Implants Noise figure Microwave circuits Integrated circuit manufacture
Content Type	Text
Resource Type	Article
Subject	Condensed Matter Physics Electrical and Electronic Engineering Radiation

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Characteristics of deep-submicrometer MOSFET and its empirical nonlinear RF model