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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Hung, C.-M. Ho, Y.-C. Wu, I.-C. O, K. |
| Copyright Year | 1963 |
| Abstract | In a foundry 0.8-/spl mu/m CMOS process, low-cost capacitors with a measured Q factor of around 50 at 3 GHz and high intrinsic capacitance/area (/spl sim/200 nF/cm/sup 2/) were demonstrated. When extrapolated to 900 MHz, the Q factor is greater than 100. The capacitors use a poly-to-n-well MOS structure which has been commonly dismissed for high-Q applications due to the high n-well sheet resistance (/spl sim/1 k/spl Omega///spl square/). Utilizing the structure, a low-noise amplifier (LNA) with a resonant frequency of 960 MHz, power gain of 16.2 dB, 1-dB compression point (P/sub 1 dB/) of -5 dBm, and noise figure of 3.5 dB was demonstrated. Using a rule of thumb, the third-order harmonic intercept point (P/sub IP3/) was estimated to be 5 dBm from the P/sub 1 dB/ data. Despite concerns for nonlinearity of the capacitors, these results suggest that this capacitor structure could be used in LNA's with a large dynamic range. |
| Sponsorship | IEEE Microwave Theory and Techniques Society |
| Starting Page | 505 |
| Ending Page | 511 |
| Page Count | 7 |
| File Size | 210263 |
| File Format | |
| ISSN | 00189480 |
| Volume Number | 46 |
| Issue Number | 5 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 1998-05-01 |
| Publisher Place | U.S.A. |
| Access Restriction | One Nation One Subscription (ONOS) |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | CMOS process MOS capacitors Q factor Foundries Area measurement Capacitance measurement Q measurement Low-noise amplifiers Resonant frequency Gain |
| Content Type | Text |
| Resource Type | Article |
| Subject | Condensed Matter Physics Electrical and Electronic Engineering Radiation |
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