NDLI: The effect of substrate bias on the properties of NiO/NiFe and NiO/CoFe exchange biased spin-valve sensors

Content Provider	IEEE Xplore Digital Library
Author	Shuxiang Li Plaskett, T.S. Freitas, P.P. Bernardo, J. Almeida, B. Sousa, J.B.
Copyright Year	1965
Abstract	The effect of substrate bias applied during the deposition of NiO on the properties of unshielded NiO/Ni/sub 81/Fe/sub 19/ and NiO/Co/sub 87/Fe/sub 13/ biased spin-valve sensors was investigated. The addition of substrate bias of -40 V increased the blocking temperature T/sub b/ from 100-190/spl deg/C for NiO/NiFe biased spin valves, and from 70-190/spl deg/C for NiO/CoFe biased spin valves. The thermal stability upon anneal increased with substrate bias from 150-200/spl deg/C for NiO/NiFe biased spin-valve sensors, and from 200-280/spl deg/C for NiO/CoFe biased spin-valve sensors. At an operating temperature of 80/spl deg/C, sensor magnetoresistance decreases 15% from its room temperature value for NiO/CoFe sensors where NiO was deposited under -40 V bias. At this temperature, the sensor transfer curves are well linearized and Barkhausen noise free. NiO films prepared with varying substrate bias were examined by atomic force microscopy (AFM) and X-ray diffraction. Substrate bias decreases surface morphology and grain size of NiO, which probably contributes to the observed improvement of blocking temperature.
Sponsorship	IEEE Magnetics Society
Starting Page	3772
Ending Page	3777
Page Count	6
File Size	180260
File Format	PDF
ISSN	00189464
Volume Number	34
Issue Number	5
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1998-09-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Temperature sensors Magnetic sensors Iron Spin valves Thermal sensors Atomic force microscopy Gas detectors Thermal stability Annealing Magnetoresistance
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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