NDLI: Radiation-Insensitive Silicon Oxynitride Films for Use in Silicon Devices---Part II

Content Provider	IEEE Xplore Digital Library
Author	Schmidt, P. F. Ashner, J. D.
Copyright Year	1963
Abstract	We report here on the interface state densities at the Si/Silicon Oxynitride (SiON) interface before and after ionizing irradiation, on extended B T tests on Si/SiON capacitors, and on the fabrication and properties of SiON passivated bipolar transistors and P-channel IGFETs. Preliminary data are also presented for gold and copper diffused capacitor structures. The fast state density Nfs after a 1/2 hr. anneal in H2 at 900°C is approximately 8x1010 eV-1 cm-2 near midgap, and increases into the high 1011 eV-1 cm-2 range near the band edges. After an absorbed dose of 1.3 Mrads, the densities near midgap had increased by a factor of 1.3, but showed little change near the band edges. B-T tests under negative bias at l.6×106 V/cm and at temperatures up to 330°C showed a Vfb drift of 2-3 V to more positive values during the first hour, which did not change thereafter; very little drift occurred under positive bias and the same test condition. Test duration was 63 hours for either polarity of bias. This BT-stability, observed on Si/SiON/Al structures, is often lost after gold wire thermocompression bonding. Si/SiON/ tungsten-gold contacts showed no deterioration after thermocompression bonding. SiON passivated type 16F NPN bipolar transistors had initial gain characteristics similar to SiO2 passivated controls, whereas their tolerance to ionizing radiation was much greater. Degradation of hFE to 50% of the initial gain occurred for the SiO2 passivated devices after an absorbed dose of about 1 Mrad and for the SiON passivated devices after 35 Mrads.
Sponsorship	IEEE Nuclear and Plasma Sciences Society Computer Applications in Nuclear and Plasma Sciences (CANPS) Lawrence Berkeley Lab. Lawrence Livermore Nat. Lab. APS College of William and Mary Continuous Electron Beam Accelerator Facility NASA Defence Nuclear Agency Sandia National Laboratories Jet Propulsion Laboratory Brookhaven Nat. Lab. Lawrence Livermore Nat. Lab IEEE/NPPS Radiat. Effects Committee Defence Nuclear Agency/DoD Sandia National Laboratories/DOE Jet Propulsion Laboratory/NASA Phillips Lab./DoD
Starting Page	11
Ending Page	17
Page Count	7
File Size	1803175
File Format	PDF
ISSN	00189499
Volume Number	17
Issue Number	6
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1970-12-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Silicon Semiconductor films Testing Ionizing radiation Capacitors Bipolar transistors Gold Bonding Interface states Fabrication
Content Type	Text
Resource Type	Article
Subject	Nuclear and High Energy Physics Electrical and Electronic Engineering Nuclear Energy and Engineering

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Radiation-Insensitive Silicon Oxynitride Films for Use in Silicon Devices

Origin of Interface States and Oxide Charges Generated by Ionizing Radiation

Radiation Hardened Silicon Devices Using a Novel Thick Oxide

Radiation effects on ion-implanted silicon-dioxide films

Total-Dose Survival Probability for Bipolar Transistors

The Selection of Transistors for Use in Ionizing Radiation Fields

Dependence of MOS Device Radiation-Sensitivity on Oxide Impurities

Radiation-Induced Perturbations of the Electrical Properties of the Silicon-Silicon Dioxide Interface

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Radiation-Insensitive Silicon Oxynitride Films for Use in Silicon Devices---Part II

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Radiation-Insensitive Silicon Oxynitride Films for Use in Silicon Devices---Part II