NDLI: Increasing the density of planar magnetic domain memories

Content Provider	IEEE Xplore Digital Library
Author	Battarel, C. Morille, R. Caplain, A.
Copyright Year	1965
Abstract	The propagation of flat domains in soft ferromagnetic thin films with uniaxial anisotropy has been utilized in the past to implement low-cost nonvolatile shift register memories. However the low density of storage, the poor quality of the films, and the complexity of the structure have overwhelmed the inherent low material cost and simple manufacturing tooling. As a result, the devices have not been competitive. A novel, very simplified structure using chemically deposited soft and hard exchange-coupled thin films is described. Localized magnetostatic fields are created through rectangular wide regions of the propagation channels in order to permit the storage of very small domains and the control of the domain propagation when the shift conductors are current pulsed. Experimental work on a 104 kbits/cm²density register geometry is reported, and the improvements necessary to reach higher densities are discussed.
Sponsorship	IEEE Magnetics Society
Starting Page	1509
Ending Page	1513
Page Count	5
File Size	640274
File Format	PDF
ISSN	00189464
Volume Number	19
Issue Number	4
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1983-07-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Magnetic domains Material storage Transistors Anisotropic magnetoresistance Nonvolatile memory Shift registers Magnetic films Magnetic materials Costs Manufacturing
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
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