NDLI: Reactive ion etching in the fabrication of niobium tunnel junctions

Content Provider	IEEE Xplore Digital Library
Author	Reible, S.
Copyright Year	1965
Abstract	A niobium-based tunnel-junction technology has been developed for analog signal-processing applications. Devices of interest would integrate superconductive transmission lines and superconductor/insulator/superconductor (SIS) mixers. Reactive ion etching of niobium patterns with linewidths of 1 μm or less has been investigated with regard to the composition of gases, chamber pressure and power levels. These studies were made on RF-sputtered niobium films having critical-transition temperatures above 9°K. Junction area is defined by reactively ion etching insulating films of silicon monoxide to resolutions of 0.3μm or better. A niobium-oxide tunnel barrier is grown by RF-plasma oxidation. Proper control of the technology has allowed the achievement of critical current densities which are uniform to 10% or better over the silicon substrate. Junction V-I characteristics show low leakage currents with critical current densities to 2 × 10⁴A/cm². Lead is employed for counter-electrodes and indium-gold (or aluminum) for circuit resistors. The robustness and stability of niobium-based junctions is essential in applications which normally require extreme dependability and long standby times.
Sponsorship	IEEE Magnetics Society
Starting Page	303
Ending Page	306
Page Count	4
File Size	575283
File Format	PDF
ISSN	00189464
Volume Number	17
Issue Number	1
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1981-01-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Etching Fabrication Niobium Superconducting transmission lines Superconducting films Josephson junctions Superconducting devices Insulation Silicon Critical current density
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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