NDLI: Analysis and Modeling of the Light-Dependent Full Well Capacity of the 4-T Pixel in CMOS Image Sensors

Content Provider	IEEE Xplore Digital Library
Author	Gao, Z. Xu, J. Zhou, Y. Nie, K.
Copyright Year	2001
Abstract	The full well capacity (FWC) of the four-transistor pixel in CMOS image sensors (CISs) should be a constant which is decided by photodiode structure, doping, and manufacturer, whereas the measured FWC in experiments varies with the incident light intensity. In this paper, a model for the light-dependent FWC is developed. The model includes two sources that contribute to the extra light-dependent charge. They are collected along with the intrinsic full well charge in the photodiode or the floating diffusion. The first source comes from the equilibrium between the photocurrent and the photodiode forward current. The other source is the extra collected charges during charge transfer. An analysis model is developed to describe these two light-dependent sources, and the saturated output shows logarithmic and linear relationship with light intensity at low- and high-light condition, respectively. A device level simulation using technology computer aided design software was performed to verify the proposed model. Furthermore, a prototype chip with 15- $\mu \text{m} \times 15$ - $\mu \text{m}$ pixels fabricated in a 0.18- $\mu \text{m}$ CIS process was tested. The simulation and measurement results exhibit fairly good consistency with the proposed model. The estimation of the intrinsic FWC is also discussed.
Sponsorship	IEEE Sensors Council
Starting Page	2367
Ending Page	2373
Page Count	7
File Size	1372319
File Format	PDF
ISSN	1530437X
Volume Number	16
Issue Number	8
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2016-01-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Photodiodes Partial discharges Semiconductor process modeling Photoconductivity Junctions Capacitance Semiconductor device modeling light dependent CMOS image sensor four-transistor active pixel full well capacity
Content Type	Text
Resource Type	Article
Subject	Instrumentation Electrical and Electronic Engineering

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