NDLI: Gate Engineering to Improve Effective Resistance of 28-nm High-<inline-formula> <tex-math notation=LaTeX>$k$ </tex-math></inline-formula> Metal Gate CMOS Devices

Content Provider	IEEE Xplore Digital Library
Author	JinHyuk Jeong Ho Lee DongHae Kang SoYoung Kim
Copyright Year	1963
Abstract	In this paper, we report the development of a high-k/metal gate stacking process to reduce the effective gate resistance, and circuit level validation results in 28-nm gate first integrated high-k /metal gate CMOS devices. To achieve this, millisecond annealing was adopted and the silicon (Si) gate and TiN gate electrode thicknesses were controlled. The recrystallized poly-Si gate by millisecond annealing improved the performance of the ring oscillator (RO) by 15% and the minimum operating voltage (V_min) of the high-frequency test pattern (HFTP) by 34 mV. The poly-Si gate improved the uniformity of the boron concentration and suppressed localized low doping area at the bottom of the gate. When the Si gate thickness was reduced by 10 Å with respect to the reference (POR) value, the performance of the RO improved by 5% and V_min of HFTP improved by 20 mV due to the shorter boron diffusion distance. A 10- Å thicker TiN gate electrode improved V_min of HFTP by 30 mV, since the thicker TiN reduced the TiN/Si gate interface resistance.
Sponsorship	IEEE Electron Devices Society
Starting Page	259
Ending Page	264
Page Count	6
File Size	2885296
File Format	PDF
ISSN	00189383
Volume Number	63
Issue Number	1
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2016-01-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Logic gates Tin Resistance Silicon Boron Annealing MOSFET TiN thickness. Effective gate resistance high-k/metal gate millisecond annealing poly-Si TiN thickness high- $k$ /metal gate
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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