NDLI: 3-D-Stacked 16-Mpixel Global Shutter CMOS Image Sensor Using Reliable In-Pixel Four Million Microbump Interconnections With 7.6-<inline-formula> <tex-math notation=LaTeX>$mu text{m}$ </tex-math></inline-formula> Pitch

Content Provider	IEEE Xplore Digital Library
Author	Kondo, T. Takazawa, N. Takemoto, Y. Tsukimura, M. Saito, H. Kato, H. Aoki, J. Kobayashi, K. Suzuki, S. Gomi, Y. Matsuda, S. Tadaki, Y.
Copyright Year	1963
Abstract	We have developed a 3-D-stacked 16-Mpixel, 3.8-μm pitch, and global shutter (GS) CMOS image sensor with a 2-Mpixel 10 000-frames/s high-speed image-capturing mode, with four million reliable microbump interconnections. This sensor consists of a photodiode (PD) substrate and an in-pixel storage node substrate. The four PDs in the unit pixel circuit on the top substrate share one microbump interconnection in 7.6-μm pitch. Each signal of the PDs is transferred to the corresponding storage node on the bottom substrate via the interconnection to achieve a GS function. The ratio of the parasitic light sensitivity of an in-pixel storage node and the light sensitivity of a PD is -180 dB, which is the best record for a CMOS image sensor with 3.8-μm pixels. The image sensor was fabricated with a wafer-on-wafer bonding process technology. We confirmed that the bonding process did not harm the pixel or the MOS transistor characteristics and required no extra area, which means no restrictions on the layout design of microbumps or circuits. No reliability problems were observed in either a heat cycle test or a high temperature and high humidity test.
Sponsorship	IEEE Electron Devices Society
Starting Page	128
Ending Page	137
Page Count	10
File Size	6264460
File Format	PDF
ISSN	00189383
Volume Number	63
Issue Number	1
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2016-01-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Substrates MOSFET Image sensors Arrays Integrated circuit interconnections Capacitors reliability. 3-D stack bump CMOS image sensor (CIS) global shutter (GS) reliability
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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