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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Amaravati, A. Dave, M. Baghini, M.S. Sharma, D.K. |
| Copyright Year | 1993 |
| Abstract | This brief presents a novel process and temperature (PT)-invariant transconductor, fabricated and tested in 180-nm CMOS technology. It uses a novel bias circuit for implementing a PT-invariant transconductor using a MOSFET in triode region. Measurements show that the transconductance varies only by ±3.4% across 18 fabricated chips and over temperatures ranging from 25 °C to 100 °C. Simulations show that variation of the transconductance across process corners is ±6.7% and across temperature range of 0 °C to 100 °C is ±1.6%. The proposed PT-invariant transconductor has the minimum variation among the fully on-chip transconductors reported so far. The proposed circuit consumes 136 μW of power. |
| Sponsorship | IEEE Computer Society Association for Computing Machinery (ACM)/SIGDA IEEE Computer Society Technical Committee on Design Automation |
| Starting Page | 1961 |
| Ending Page | 1964 |
| Page Count | 4 |
| File Size | 1160595 |
| File Format | |
| ISSN | 10638210 |
| Volume Number | 23 |
| Issue Number | 9 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2015-01-01 |
| Publisher Place | U.S.A. |
| Access Restriction | One Nation One Subscription (ONOS) |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Temperature measurement Transconductance System-on-chip Resistors MOSFET Semiconductor device measurement Generators transconductance Process variations proportional to absolute temperature (PTAT) |
| Content Type | Text |
| Resource Type | Article |
| Subject | Electrical and Electronic Engineering Software Hardware and Architecture |
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