NDLI: Compact Model for Inversion Charge in III–V Bulk MOSFET Including Non-Parabolicity

Content Provider	IEEE Xplore Digital Library
Author	Hiblot, G. Mugny, G. Rafhay, Q. Boeuf, F. Ghibaudo, G.
Copyright Year	2002
Abstract	In this paper, Poisson-Schrödinger simulations of bulk MOSFETs with an InGaAs channel, including traps and nonparabolicity, are compared against experimental data. These simulations are later used to validate a compact model for the inversion charge in the channel as a function of the gate voltage. Finally, an expression for the long-channel drain current is derived from this inversion charge model, and confirmed with experimental data. This current model, adapted for alternative channel devices, is suitable for the evaluation of III-V MOSFET performance.
Sponsorship	IEEE Nanotechnology Council
Starting Page	768
Ending Page	775
Page Count	8
File Size	915148
File Format	PDF
ISSN	1536125X
Volume Number	14
Issue Number	4
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2015-01-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Logic gates Mathematical model Capacitance Semiconductor device modeling Simulation Approximation methods Numerical models quantum mechanical effects MOSFET III-V bulk compact model inversion charge Mastar ITRS Bulk III–V mastar
Content Type	Text
Resource Type	Article
Subject	Nanoscience and Nanotechnology Electrical and Electronic Engineering Computer Science Applications

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Compact Model for Inversion Charge in III–V Bulk MOSFET Including Non-Parabolicity