NDLI: Comparison of Three Design Architectures for Quantum Dot Infrared Photodetectors: InGaAs-Capped Dots, Dots-in-a-Well, and Submonolayer Quantum Dots

Content Provider	IEEE Xplore Digital Library
Author	Ghadi, H. Sengupta, S. Shetty, S. Manohar, A. Balgarkashi, A. Chakrabarti, S. Pendyala, N.B. Prajapati, S.L. Kumar, A.
Copyright Year	2002
Abstract	In this letter, we compare three design architectures for quantum dot infrared photodetectors-InGaAs-capped InAs dots, InAs dot-in-a-well (DWELL), and InAs submonolayer (SML) heterostructures-in terms of optical and spectral behavior. The photoluminescence (PL) intensity measured of the SML sample at 8 K was 20 times stronger than that of the other samples, and its full-width at half-maximum value broader than the rest. Activation energy was calculated using temperature-dependent PL and dark current measurements, which showed the same trend. Peak spectral responses for the InGaAs-capped InAs dot and DWELL samples were observed at 4.1 and 7.3 μm and at 4.1 and 8.5 μm, respectively; however, only a single transition was observed for the SML sample because of the absence of a wetting layer. Spectral response of DWELL sample exhibited bias tunability at 87 K, and the SML sample exhibited high temperature of operation till 110 K. One order increment in responsivity was observed in the SML sample compared to others. The peak detectivity of InGaAs-capped InAs dot,DWELL,andSMLsampleswas 4.1 × 10⁹, 4.99 × 10⁹, and 3.89 × 10⁹ Jones, respectively, at 87 K.
Sponsorship	IEEE Nanotechnology Council
Starting Page	603
Ending Page	607
Page Count	5
File Size	743222
File Format	PDF
ISSN	1536125X
Volume Number	14
Issue Number	4
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2015-01-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Quantum dots Gallium arsenide Photodetectors Temperature measurement Indium gallium arsenide Current measurement Dark current Infrared detectors Photoluminescence quantum dots photodetectors photoluminescence
Content Type	Text
Resource Type	Article
Subject	Nanoscience and Nanotechnology Electrical and Electronic Engineering Computer Science Applications

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4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
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