NDLI: Compact Electrothermal Reliability Modeling and Experimental Characterization of Bipolar Latchup in SiC and CoolMOS Power MOSFETs

Content Provider	IEEE Xplore Digital Library
Author	Bonyadi, R. Alatise, O. Jahdi, S. Ji Hu Gonzalez, J.A.O. Li Ran Mawby, P.A.
Copyright Year	1986
Abstract	In this paper, a compact dynamic and fully coupled electrothermal model for parasitic BJT latchup is presented and validated by measurements. The model can be used to enhance the reliability of the latest generation of commercially available power devices. BJT latchup can be triggered by body-diode reverse-recovery hard commutation with high dV/dt or from avalanche conduction during unclamped inductive switching. In the case of body-diode reverse recovery, the base current that initiates BJT latchup is calculated from the solution of the ambipolar diffusion equation describing the minority carrier distribution in the antiparallel p-i-n body diode. For hard commutation with high dV/dt, the displacement current of the drain-body charging capacitance is critical for BJT latchup, whereas for avalanche conduction, the base current is calculated from impact ionization. The parasitic BJT is implemented in Simulink using the Ebers-Moll model and the temperature is calculated using a thermal network matched to the transient thermal impedance characteristic of the devices. This model has been applied to CoolMOS and SiC MOSFETs. Measurements show that the model correctly predicts BJT latchup during reverse recovery as a function of forward-current density and temperature. The model presented, when calibrated correctly by device manufacturers and applications engineers, is capable of benchmarking the robustness of power MOSFETs.
Sponsorship	IEEE Power Electronics Society
Starting Page	6978
Ending Page	6992
Page Count	15
File Size	1590552
File Format	PDF
ISSN	08858993
Volume Number	30
Issue Number	12
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2015-01-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	MOSFET Silicon carbide Mathematical model Temperature measurement Semiconductor device modeling Current measurement Temperature SiC MOSFET Reliability Body Diode Compact Electro-thermal Modelling Inverter PiN Diodes Parasitic BJT Latch-up SiC MOSFET reliability Body diode compact electrothermal modeling inverter p-i-n diodes parasitic BJT latchup
Content Type	Text
Resource Type	Article
Subject	Electrical and Electronic Engineering

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