NDLI: Behavioral Approach to SiC MPS Diode Electrothermal Model Generation

Content Provider	IEEE Xplore Digital Library
Author	Starzak, L. Zubert, M. Janicki, M. Torzewicz, T. Napieralska, M. Jablonski, G. Napieralski, A.
Copyright Year	1963
Abstract	A comprehensive approach to generation of electrothermal models of silicon carbide (SiC) power Schottky diodes is presented. Both the electrical and thermal parts of the model are behavioral. The electrical one was developed in order to accurately represent the nonlinear properties of SiC merged PiN Schottky (MPS) diodes. Its parameters are automatically obtained with a dedicated numerical procedure. The thermal model derivation differs from the earlier approaches because it is based on the analysis of thermal constant spectrum of the temperature response of a modeled device. Simple model generation and parameter extraction procedures are proposed in which no knowledge of technological data is necessary.
Sponsorship	IEEE Electron Devices Society
Starting Page	630
Ending Page	638
Page Count	9
File Size	688036
File Format	PDF
ISSN	00189383
Volume Number	60
Issue Number	2
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2013-02-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Schottky diodes Silicon carbide Semiconductor device modeling Temperature measurement Mathematical model Numerical models silicon carbide Compact thermal models (CTMs) electrothermal models power semiconductor devices
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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