NDLI: High-Mobility Stable 1200-V, 150-A 4H-SiC DMOSFET Long-Term Reliability Analysis Under High Current Density Transient Conditions

Content Provider	IEEE Xplore Digital Library
Author	Schrock, J.A. Ray, W.B. Lawson, K. Bilbao, A. Bayne, S.B. Holt, S.L. Lin Cheng Palmour, J.W. Scozzie, C.
Copyright Year	1986
Abstract	For SiC DMOSFETs to obtain widespread usage in power electronics their long-term operational ability to handle the stressful transient current and high temperatures common in power electronics needs to be further verified. To determine the long-term reliability of a single 4H-SiC DMOSFET, the effects of extreme high current density were evaluated. The 4H-SiC DMOSFET has an active conducting area of 40 mm², and is rated for 1200 V and 150 A. The device was electrically stressed by hards-witching transient currents in excess of four times the given rating (>600 A) corresponding to a current density of 1500 A/cm². Periodically throughout testing, several device characteristics including R_DS(on) and VG S(th) were measured. After 500 000 switching cycles, the device showed a 6.77% decrease in R_{DS (on)}, and only a 132-mV decreased in V_{G S(th)}. Additionally, the dc characteristics of the device were analyzed from 25 to 150 °C and revealed a 200-mV increase in on-state voltage drop at 20 A and a 2-V reduction in V_{G S(th)} at 150 °C. These results show this SiC DMOSFET has robust long-term reliability in high-power applications that are susceptible to pulse over currents, such as pulsed power modulators and hard-switched power electronics.
Sponsorship	IEEE Power Electronics Society
Starting Page	2891
Ending Page	2895
Page Count	5
File Size	602347
File Format	PDF
ISSN	08858993
Volume Number	30
Issue Number	6
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2015-01-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Switches Silicon carbide Logic gates Transient analysis Performance evaluation Power electronics Current measurement 4H-SiC DMOSFET high current density reliability testing
Content Type	Text
Resource Type	Article
Subject	Electrical and Electronic Engineering

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