NDLI: Analytical Modeling of Switching Energy of Silicon Carbide Schottky Diodes as Functions of <italic>dI <inline-formula><tex-math notation=LaTeX>$_{bf DS}$</tex-math></inline-formula>/dt</italic> and Temperature

Content Provider	IEEE Xplore Digital Library
Author	Jahdi, S. Alatise, O. Li Ran Mawby, P.
Copyright Year	1986
Abstract	SiC Schottky Barrier diodes (SiC SBD) are known to oscillate/ring in the output terminal when used as free-wheeling diodes in voltage-source converters. This ringing is due to RLC resonance among the diode capacitance, parasitic resistance, and circuit stray inductance. In this paper, a model has been developed for calculating the switching energy of SiC diodes as a function of the switching rate (dI_DS/dt of the commutating SiC MOSFET) and temperature. It is shown that the damping of the oscillations increases with decreasing temperature and decreasing dI_DS/dt. This in turn determines the switching energy of the diode, which initially decreases with decreasing dI_DS/dt and subsequently increases with decreasing dI_DS/dt thereby indicating an optimal dI_DS/dt for minimum switching energy. The total switching energy of the diode can be subdivided into three phases namely the current switching phase, the voltage switching phase, and the ringing phase. Although the switching energy in the current switching phase decreases with increasing switching rate, the switching energy of the voltage and ringing phase increases with the switching rate. The model developed characterizes the dependence of diode's switching energy on temperature and dI_DS/dt, hence, can be used to predict the behavior of the SiC SBD.
Sponsorship	IEEE Power Electronics Society
Starting Page	3345
Ending Page	3355
Page Count	11
File Size	1479248
File Format	PDF
ISSN	08858993
Volume Number	30
Issue Number	6
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2015-01-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Schottky diodes Switches Silicon carbide MOSFET Temperature measurement Capacitance Resistance switching energy Analytical modeling device characterization Schottky barrier diode (SBD) silicon carbide
Content Type	Text
Resource Type	Article
Subject	Electrical and Electronic Engineering

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