NDLI: Spectroscopic Ellipsometry Applied in the Full p-i-n a-Si:H Solar Cell Device Configuration

Content Provider	IEEE Xplore Digital Library
Author	Junda, M.M. Shan, A. Koirala, P. Collins, R.W. Podraza, N.J.
Copyright Year	2011
Abstract	Assessment of the performance of single-junction hydrogenated amorphous silicon (a-Si:H) p-i-n configuration solar cells has been developed with a combination of real-time spectroscopic ellipsometry (RTSE) and current-voltage (I-V) measurements. For each layer, RTSE measurements enabled the determination of thickness and optical properties in the form of the complex dielectric function (ε = ε₁ + iε₂) spectra. RTSE tracked changes in a as a function of depth and was used to extract profiles in the i-layer bandgap and crystallite fraction in the n-layer. Through mapping I-V characteristic measurements, spatial variations in device performance were determined. By comparing individual devices at the location of the RTSE beam spot, the influence of a and thickness for each layer on device performance was identified through simulations of quantum efficiency yielding the shortcircuit current. This study compares two devices prepared with different superstrate preheating processes and finds that the combination of RTSE and I-V measurements along with quantum efficiency simulations were able to identify plasma damage to the transparent conducting oxide as the likely cause for variation in device performance. This comparison serves as one example of how the optically obtained information, such as thickness and a for each layer, can be used to understand the final device performance.
Starting Page	307
Ending Page	312
Page Count	6
File Size	876270
File Format	PDF
ISSN	21563381
Volume Number	5
Issue Number	1
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2015-01-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Performance evaluation Photonic band gap Materials Photovoltaic cells Ellipsometry PIN photodiodes Real-time systems single-junction photovoltaic cells Amorphous hydrogenated silicon real-time spectroscopic ellipsometry (RTSE)
Content Type	Text
Resource Type	Article
Subject	Condensed Matter Physics Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
6	Contents and Copyright Issues	Queries related to content curation and copyright issues	content@ndl.gov.in
7	National Digital Library of India Club (NDLI Club)	Queries related to NDLI Club formation, support, user awareness program, seminar/symposium, collaboration, social media, promotion, and outreach	clubsupport@ndl.gov.in
8	Digital Preservation Centre (DPC)	Assistance with digitizing and archiving copyright-free printed books	dpc@ndl.gov.in
9	IDR Setup or Support	Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops	idr@ndl.gov.in

Characterization of amorphous silicon solar cell preparation processes by real time spectroscopic ellipsometry

Optimum band gap for amorphous silicon based solar cells

Real time spectroscopic ellipsometry studies of the top junctions of a-Si:H-based solar cells

Superlattice contact layers for high open circuit voltage a-Si:H solar cells

Numerical modeling of multijunction, amorphous silicon based p-i-n solar cells

Advances in amorphous silicon solar cells

A study of amorphous silicon-carbon alloy solar cells

Spectroscopic Ellipsometry Studies of n-i-p Hydrogenated Amorphous Silicon Based Photovoltaic Devices

Numerical modeling of an amorphous-silicon-based p-i-n solar cell

Spectroscopic Ellipsometry Applied in the Full p-i-n a-Si:H Solar Cell Device Configuration

Similar Documents

Characterization of amorphous silicon solar cell preparation processes by real time spectroscopic ellipsometry

Optimum band gap for amorphous silicon based solar cells

Real time spectroscopic ellipsometry studies of the top junctions of a-Si:H-based solar cells

Superlattice contact layers for high open circuit voltage a-Si:H solar cells

Numerical modeling of multijunction, amorphous silicon based p-i-n solar cells

Advances in amorphous silicon solar cells

A study of amorphous silicon-carbon alloy solar cells

Spectroscopic Ellipsometry Studies of n-i-p Hydrogenated Amorphous Silicon Based Photovoltaic Devices

Numerical modeling of an amorphous-silicon-based p-i-n solar cell

Spectroscopic Ellipsometry Applied in the Full p-i-n a-Si:H Solar Cell Device Configuration