NDLI: New Superjunction LDMOS Breaking Silicon Limit by Electric Field Modulation of Buffered Step Doping

Content Provider	IEEE Xplore Digital Library
Author	Baoxing Duan Zhen Cao Xaoning Yuan Song Yuan Yintang Yang
Copyright Year	1980
Abstract	A new superjunction LDMOS (SJ-LDMOS) is proposed with the step doping buffered layer under the SJ layer to obtain the low loss for the high-voltage region. The substrate-assisted depletion effect, which results from the p-type substrate for the n-channel SJ-LDMOS, has been eliminated by the step doping buffer layer. By the effect of the electric field modulation, a more uniform lateral electric filed is obtained due to the new high-electric field peaks introduced by the buffered step doping, which improves the breakdown voltage (BV) and average lateral electric field. Using ISE simulation, the BV of proposed SJ-LDMOST is increased by ~50% than that of the conventional LDMOS, and improved by ~32% than that of buffered SJ-LDMOS. The lateral average electric field is increased to 19 V/μm in the high-voltage region The experimental RON,sp of the proposed SJ-LDMOS is 241 mΩ · cm² with a BV of 368 V, breaking the silicon limit relationship for R_ON,sp of 71.8 mΩ · cm² with the BV of 242 V in the conventional LDMOS with the same drift region length The merit of BV/R_ON,sp is 15.3 for the proposed SJ-LDMOS compared with that of 3.4 for the conventional LDMOS.
Sponsorship	IEEE Electron Devices Society
Starting Page	47
Ending Page	49
Page Count	3
File Size	566796
File Format	PDF
ISSN	07413106
Volume Number	36
Issue Number	1
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2015-01-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Electric fields Doping Substrates Junctions Silicon Modulation Power semiconductor devices substrate-assisted depletion Super Junction LDMOS, electric field modulation Super junction LDMOS
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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