NDLI: Low <formula formulatype=inline><tex Notation=TeX>${rm VDDmin}$</tex></formula> Swing-Sample-and-Couple Sense Amplifier and Energy-Efficient Self-Boost-Write-Termination Scheme for Embedded ReRAM Macros Against Resistance and Switch-Time Variations

Content Provider	IEEE Xplore Digital Library
Author	Meng-Fan Chang Jui-Jen Wu Tun-Fei Chien Yen-Chen Liu Ting-Chin Yang Wen-Chao Shen Ya-Chin King Chrong Jung Lin Ku-Feng Lin Yu-Der Chih Chang, J.
Copyright Year	1966
Abstract	The designs of resistive RAM (ReRAM) macros are limited by 1) a small sensing margin, limited read- VDDmin, and slow read access time (T_AC) caused by a high cell-resistance and small cell-resistance-ratio (R-ratio) and 2) poor power integrity and increased energy waste attributable to a large SET dc-current (I_DC-SET) resulting from the wide distribution of write (SET)-times (T_SET). This study proposes a swing-sample-and-couple (SSC) voltage-mode sense amplifier (VSA) to enable an approximately 1.8+x greater sensing margin for lower VDD min and a 1.7+x faster read speed across a wide VDD range, compared with conventional VSAs. A 4T self-boost-write-termination (SBWT) scheme is proposed to cut off the I_DC-SET of devices with a rapid T SET. The SBWT scheme reduces 99+% of the I_DC-SET with an area penalty below 0.5%. A fabricated 512 row 28 nm 1 Mb ReRAM macro achieved T_AC = 404 ns when VDD=0.27 V and confirmed the I_DC-SET cutoff by the SBWT.
Sponsorship	IEEE Solid-State Circuits Society IEEE Electron Devices Society IEEE Circuits and Systems Society Japan Society of Applied Physics (JSAP) IEEE Microwave Theory and Techniques Society IEEE San Francisco Section Bay Area Council Univ. PA IEEE
Starting Page	2786
Ending Page	2795
Page Count	10
File Size	3125444
File Format	PDF
ISSN	00189200
Volume Number	50
Issue Number	11
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2015-01-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Sensors Resistance Switches Transistors Arrays Switching circuits Nonvolatile memory write driver ReRAM RRAM sense amplifier voltage-mode sense amplifier
Content Type	Text
Resource Type	Article
Subject	Electrical and Electronic Engineering

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