NDLI: Modeling and simulation of graphene-gated graphene-GaAs Schottky junction field-effect solar cell for its performance enhancement

Content Provider	IEEE Xplore Digital Library
Author	Wenchao Chen Xiaoqiang Li Wen-Yan Yin Shisheng Lin Zhenguo Zhao Erping Li Haijing Zhou
Copyright Year	1963
Abstract	Modeling and simulation of graphene-gated graphene-GaAs Schottky junction field-effect solar cell is performed using in-house developed algorithm based on finite-difference method, where Poisson and drift-diffusion equations are solved in an appropriate way. Our algorithm is verified by comparing the simulated J-V curve of solar cell with the previous experimental one. The carrier generation rate is calculated with light multireflection in the solar cell excluded, due to large optical absorption coefficient of GaAs, and the radiative recombination in GaAs leads to ~5% light generated carrier loss. The charge transfer effect in graphene is investigated, which can affect open circuit voltage, and in particular for the semiconductor substrate with very low hole mobility. It is further numerically demonstrated that: (1) both open circuit voltage V_OC and short circuit current J_SC of the solar cell are governed by doping concentration through affecting Schottky barrier height and depletion width; (2) the value of V_OC can be effectively adjusted by decreasing the thickness of gate oxide; however, it may result in oxide breakdown or reliability problem; and (3) there is tunability inertia for V_OC with multilayer junction graphene implemented, but it can provide low series resistance.
Sponsorship	IEEE Electron Devices Society
Starting Page	3760
Ending Page	3766
Page Count	7
File Size	1638520
File Format	PDF
ISSN	00189383
Volume Number	62
Issue Number	11
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2015-01-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Photovoltaic cells Junctions Gallium arsenide Graphene Doping Logic gates Radiative recombination solar cell. Charge transfer effect drift diffusion field effect finite-difference method (FDM) GaAs graphene open circuit voltage radiative recombination Schottky junction short circuit current solar cell
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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