NDLI: Internal Pulse Amplification in High Field, Silicon Radiation Detection Junctions

Content Provider	IEEE Xplore Digital Library
Author	Huth, Gerald C. Trice, James B. Shannon, James A. McKinney, Russell A.
Copyright Year	1963
Abstract	Significant internal pulse amplification has been observed in silicon p-n junction radiation detectors operated in the very high field (but prebreakdown) region. Such internal electric field values (peak fields of 60 - 250 kilovolts cm-1) are attainable over distances of up to 250 microns through the use of geometrical control of the field existing at the surface of the junction. Amplification factor for the simple P + N geometry studied thus far is not constant being greatest for the short range particles and decreasing as particle range into the detector increases. In the amplifying mode, a directional effect is observed with amplification being dependent upon energy loss in the region of highest field (and thus the direction of the particle). Detector response has been measured for incident alpha particles, beta particles in the energy range from 0.04 MeV to minimum ionizing, protons from 0.5 - 3.0 MeV, and for 5 keV x-rays. Pulse risetimes which should be in the sub-nanosecond range for these geometries have been measured with alpha particles and with synchronous 0.88 and 1.06 micron wavelength photons from pulsed lasers with the detector being able to follow laser pulses with 2 - 5 nanosecond risetime. It is believed that the magnitude of internal amplification makes feasible the use of tunnel diodes in associated circuitry for numerous applications. Preliminary results to this end are briefly discussed.
Sponsorship	IEEE Nuclear and Plasma Sciences Society Computer Applications in Nuclear and Plasma Sciences (CANPS) Lawrence Berkeley Lab. Lawrence Livermore Nat. Lab. APS College of William and Mary Continuous Electron Beam Accelerator Facility NASA Defence Nuclear Agency Sandia National Laboratories Jet Propulsion Laboratory Brookhaven Nat. Lab. Lawrence Livermore Nat. Lab IEEE/NPPS Radiat. Effects Committee Defence Nuclear Agency/DoD Sandia National Laboratories/DOE Jet Propulsion Laboratory/NASA Phillips Lab./DoD
Starting Page	275
Ending Page	280
Page Count	6
File Size	1610672
File Format	PDF
ISSN	00189499
Volume Number	12
Issue Number	1
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1965-02-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Pulse amplifiers Silicon Radiation detectors Pulse measurements Optical pulses Particle measurements Alpha particles X-ray lasers P-n junctions Geometry
Content Type	Text
Resource Type	Article
Subject	Nuclear and High Energy Physics Electrical and Electronic Engineering Nuclear Energy and Engineering

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4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
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