NDLI: Analysis, Design, and Implementation of the Class-E ZVS Power Amplifier With MOSFET Nonlinear Drain-to-Source Parasitic Capacitance at any Grading Coefficient

Content Provider	IEEE Xplore Digital Library
Author	Hayati, M. Lotfi, A. Kazimierczuk, M.K. Sekiya, H.
Copyright Year	1986
Abstract	In this paper, analytical expressions for waveforms and design relationships are derived for the class-E power amplifier with the MOSFET nonlinear drain-to-source parasitic capacitance under the subnominal operation, i.e., only zero-voltage switching (ZVS) condition, for any grading coefficient m of the MOSFET body junction diode and 50% duty ratio. Only the MOSFET nonlinear drain-to-source parasitic capacitance is used for the analysis of the class-E ZVS power amplifier, and its nonlinearity is determined by the grading coefficient m. The switch voltage waveform does not satisfy the class-E ZVS switching condition when only the linear shunt capacitance is considered. The grading coefficient m is used as an adjustment parameter that provides accurate design to satisfy the given output power and peak switch voltage simultaneously. Therefore, the grading coefficient m is the important parameter to satisfy the class-E ZVS condition and given design specifications, which is the most important result in this paper. Additionally, the output power capability and maximum operating frequency are affected by the grading coefficient m. The analytical expressions are obtained by considering the grading coefficient m as an adjustment parameter, which is validated by PSpice simulations and laboratory experiments. The measurement and PSpice simulation results agreed with the analytical expressions quantitatively, which denotes the usefulness and effectiveness of our obtained analytical expressions.
Sponsorship	IEEE Power Electronics Society
Starting Page	4989
Ending Page	4999
Page Count	11
File Size	1883313
File Format	PDF
ISSN	08858993
Volume Number	29
Issue Number	9
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2014-01-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	MOSFET Power amplifiers Zero voltage switching Switches Parasitic capacitance Mathematical model zero-voltage switching (ZVS) Class-E power amplifier grading coefficient of junction capacitance MOSFET nonlinear drain-to-source parasitic capacitance output power peak switch current peak switch voltage subnominal operation
Content Type	Text
Resource Type	Article
Subject	Electrical and Electronic Engineering

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