NDLI: Analysis and Design of Class-E Power Amplifier With MOSFET Parasitic Linear and Nonlinear Capacitances at Any Duty Ratio

Content Provider	IEEE Xplore Digital Library
Author	Hayati, M. Lotfi, A. Kazimierczuk, M. K. Sekiya, H.
Copyright Year	1986
Abstract	This paper presents analytical expressions for the class-E power amplifier with MOSFET linear gate-to-drain and nonlinear drain-to-source parasitic capacitances at any duty ratio. The maximum operating frequency, output power capability, and element values as functions of the duty ratio are obtained. The element values are directly dependent upon the selection of duty ratio and require a careful duty ratio selection to minimize component power losses and to maximize the total efficiency. Two design examples at 25 and 9 W output power at 4-MHz operating frequency along with the PSpice-simulation and experimental waveforms are presented. It is shown from the derived expressions that the slope of the voltage across the MOSFET gate-to-drain parasitic capacitance during the switch-off state as a function of the duty ratio affects the switch-voltage waveform. Therefore, it is possible to achieve the required peak switch voltage and the class-E ZVS/ZVDS conditions simultaneously by adjusting the duty ratio. The theoretical results and PSpice simulations agreed with experimental results quantitatively, which shows the validity of the presented analysis.
Sponsorship	IEEE Power Electronics Society
Starting Page	5222
Ending Page	5232
Page Count	11
File Size	1530605
File Format	PDF
ISSN	08858993
Volume Number	28
Issue Number	11
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2013-11-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Capacitance Switches Power amplifiers Logic gates Zero voltage switching Power MOSFET peak switch voltage Any duty ratio class-E ZVS/ZVDS conditions class-E power amplifier efficiency linear gate-to-drain capacitance nonlinear drain-to-source capacitance parasitic capacitances peak switch current
Content Type	Text
Resource Type	Article
Subject	Electrical and Electronic Engineering

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Design of Class-E Amplifier With MOSFET Linear Gate-to-Drain and Nonlinear Drain-to-Source Capacitances

Analysis, Design, and Implementation of the Class-E ZVS Power Amplifier With MOSFET Nonlinear Drain-to-Source Parasitic Capacitance at any Grading Coefficient

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