NDLI: Electrical and Optical Studies of Deep Levels in Nominally Undoped Thallium Bromide

Content Provider	IEEE Xplore Digital Library
Author	Smith, H.M. Haegel, N.M. Phillips, D.J. Cirignano, L. Ciampi, G. Hadong Kim Chrzan, D.C. Haller, E.E.
Copyright Year	1963
Abstract	Photo-induced conductivity transient spectroscopy (PICTS) and cathodoluminescence (CL) measurements were performed on nominally undoped detector grade samples of TlBr. In PICTS measurements, nine traps were detected in the temperature range 80-250 K using four-gate analysis. Five of the traps are tentatively identified as electron traps, and four as hole traps. CL measurements yielded two broad peaks common to all samples and most likely associated with defects. Correlations between the optically and electrically detected deep levels are considered. Above 250 K, the photoconductivity transients measured in the PICTS experiments exhibited anomalous transient behavior, indicated by non-monotonic slope variations as a function of time. The origin of the transients is under further investigation, but their presence precludes the accurate determination of trap parameters in TlBr above 250 K with traditional PICTS analysis. Their discovery was made possible by the use of a PICTS system that records whole photoconductivity transients, as opposed to reduced and processed signals.
Sponsorship	IEEE Nuclear and Plasma Sciences Society Computer Applications in Nuclear and Plasma Sciences (CANPS) Lawrence Berkeley Lab. Lawrence Livermore Nat. Lab. APS College of William and Mary Continuous Electron Beam Accelerator Facility NASA Defence Nuclear Agency Sandia National Laboratories Jet Propulsion Laboratory Brookhaven Nat. Lab. Lawrence Livermore Nat. Lab IEEE/NPPS Radiat. Effects Committee Defence Nuclear Agency/DoD Sandia National Laboratories/DOE Jet Propulsion Laboratory/NASA Phillips Lab./DoD
Starting Page	689
Ending Page	694
Page Count	6
File Size	737970
File Format	PDF
ISSN	00189499
Volume Number	61
Issue Number	1
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2014-01-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Transient analysis Electron traps Temperature measurement Crystals Photoconductivity thallium bromide Cathodoluminescence deep levels photo-induced conductivity transient spectroscopy semiconductor impurities
Content Type	Text
Resource Type	Article
Subject	Nuclear and High Energy Physics Electrical and Electronic Engineering Nuclear Energy and Engineering

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