NDLI: Area and Energy Efficient High-Performance ZnO Wavy Channel Thin-Film Transistor

Content Provider	IEEE Xplore Digital Library
Author	Hanna, A.N. Ghoneim, M.T. Bahabry, R.R. Hussain, A.M. Fahad, H.M. Hussain, M.M.
Copyright Year	1963
Abstract	Increased output current while maintaining low power consumption in thin-film transistors (TFTs) is essential for future generation large-area high-resolution displays. Here, we show wavy channel (WC) architecture in TFT that allows the expansion of the transistor width in the direction perpendicular to the substrate through integrating continuous fin features on the underlying substrate. This architecture enables expanding the TFT width without consuming any additional chip area, thus enabling increased performance while maintaining the real estate integrity. The experimental WCTFTs show a linear increase in output current as a function of number of fins per device resulting in 3.5× increase in output current when compared with planar counterparts that consume the same chip area. The new architecture also allows tuning the threshold voltage as a function of the number of fin features included in the device, as threshold voltage linearly decreased from 6.8 V for planar device to 2.6 V for WC devices with 32 fins. This makes the new architecture more power efficient as lower operation voltages could be used for WC devices compared with planar counterparts. It was also found that field effect mobility linearly increases with the number of fins included in the device, showing almost 1.8× enhancements in the field effect mobility than that of the planar counterparts. This can be attributed to higher electric field in the channel due to the fin architecture and threshold voltage shift.
Sponsorship	IEEE Electron Devices Society
Starting Page	3223
Ending Page	3228
Page Count	6
File Size	1140891
File Format	PDF
ISSN	00189383
Volume Number	61
Issue Number	9
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2014-01-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Optical wavelength conversion Thin film transistors Logic gates Zinc oxide Threshold voltage Aluminum oxide wavy Area efficiency device width performance thin film transistors (TFTs) threshold voltage
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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