NDLI: A Bandgap-Engineered Silicon-Germanium Biristor for Low-Voltage Operation

Content Provider	IEEE Xplore Digital Library
Author	Joon-Bae Moon Dong-Il Moon Yang-Kyu Choi
Copyright Year	1963
Abstract	A bandgap-engineered silicon-germanium biristor for low-voltage operation is investigated through numerical simulations. A reduced latch-up voltage is achieved using germanium as a base, and improved hysteresis is attained by adopting a hetero-bandgap structure which harnesses the silicon-germanium composite at the collector/emitter. The geometric parameters of the base length and base diameter are optimized. The proposed device shows a much lower latch-up voltage than a pure-silicon biristor and larger hysteresis than a pure-germanium biristor. Thus, the proposed bandgap-engineered silicon-germanium biristor is preferable for low-voltage operations.
Sponsorship	IEEE Electron Devices Society
Starting Page	2
Ending Page	7
Page Count	6
File Size	3001056
File Format	PDF
ISSN	00189383
Volume Number	61
Issue Number	1
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2014-01-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Photonic band gap Germanium Electric breakdown Junctions Mathematical model Silicon silicon-germanium Band offset bandgap-engineering biristor bistable resistor germanium (Ge) heterogeneous bandgap open-base breakdown
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
6	Contents and Copyright Issues	Queries related to content curation and copyright issues	content@ndl.gov.in
7	National Digital Library of India Club (NDLI Club)	Queries related to NDLI Club formation, support, user awareness program, seminar/symposium, collaboration, social media, promotion, and outreach	clubsupport@ndl.gov.in
8	Digital Preservation Centre (DPC)	Assistance with digitizing and archiving copyright-free printed books	dpc@ndl.gov.in
9	IDR Setup or Support	Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops	idr@ndl.gov.in

Biristor—Bistable Resistor Based on a Silicon Nanowire

Vertically Integrated Unidirectional Biristor

Impact of the Ge Content on the Bandgap-Narrowing Induced Leakage Current of Recessed $hbox{Si}_{1 - x}hbox{Ge}_{x}$ Source/Drain Junctions

Separating the influences of neutral base recombination and avalanche breakdown on base current reduction in SiGe HBT's

Schottky Biristor: A Metal-Semiconductor–Metal Bistable Resistor

Suppression of the floating-body effect in SOI MOSFET's by the bandgap engineering method using a Si/sub 1-x/Ge/sub x/ source structure

A Novel Enhanced Electric-Field Impact-Ionization MOS Transistor

Wide bandgap compound semiconductors for superior high-voltage unipolar power devices

Base resistance and effective bandgap reduction in n-p-n Si/Si/sub 1-x/Ge/sub x//Si HBTs with heavy base doping

A Bandgap-Engineered Silicon-Germanium Biristor for Low-Voltage Operation

Similar Documents

Biristor—Bistable Resistor Based on a Silicon Nanowire

Vertically Integrated Unidirectional Biristor

Impact of the Ge Content on the Bandgap-Narrowing Induced Leakage Current of Recessed $hbox{Si}_{1 - x}hbox{Ge}_{x}$ Source/Drain Junctions

Separating the influences of neutral base recombination and avalanche breakdown on base current reduction in SiGe HBT's

Schottky Biristor: A Metal-Semiconductor–Metal Bistable Resistor

Suppression of the floating-body effect in SOI MOSFET's by the bandgap engineering method using a Si/sub 1-x/Ge/sub x/ source structure

A Novel Enhanced Electric-Field Impact-Ionization MOS Transistor

Wide bandgap compound semiconductors for superior high-voltage unipolar power devices

Base resistance and effective bandgap reduction in n-p-n Si/Si/sub 1-x/Ge/sub x//Si HBTs with heavy base doping

A Bandgap-Engineered Silicon-Germanium Biristor for Low-Voltage Operation