Please wait, while we are loading the content...
Please wait, while we are loading the content...
| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Descoeudres, A. Holman, Z.C. Barraud, L. Morel, S. De Wolf, S. Ballif, C. |
| Copyright Year | 2011 |
| Abstract | The properties and high-efficiency potential of front- and rear-emitter silicon heterojunction solar cells on n- and p-type wafers were experimentally investigated. In the low-carrier-injection range, cells on p-type wafers suffer from reduced minority carrier lifetime, mainly due to the asymmetry in interface defect capture cross sections. This leads to slightly lower fill factors than for n-type cells. By using high-quality passivation layers, however, these losses can be minimized. High open-circuit voltages (Vocs) were obtained on both types of float zone (FZ) wafers: up to 735 mV on n-type and 726 mV on p-type. The best Voc measured on Czochralski (CZ) p-type wafers was only 692 mV, whereas it reached 732 mV on CZ n-type. The highest aperture-area certified efficiencies obtained on 4 cm2 cells were 22.14% (Voc = 727 mV , FF = 78.4%) and 21.38% (Voc = 722 mV, FF = 77.1%) on n- and p-type FZ wafers, respectively, proving that heterojunction schemes can perform almost as well on high-quality p-type as on n-type wafers. To our knowledge, this is the highest efficiency ever reported for a full silicon heterojunction solar cell on a p-type wafer, and the highest Voc on any p-type crystalline silicon device with reasonable FF. |
| Starting Page | 83 |
| Ending Page | 89 |
| Page Count | 7 |
| File Size | 1001008 |
| File Format | |
| ISSN | 21563381 |
| Volume Number | 3 |
| Issue Number | 1 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2013-01-01 |
| Publisher Place | U.S.A. |
| Access Restriction | One Nation One Subscription (ONOS) |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Photovoltaic cells Heterojunctions Indium tin oxide Silicon Current measurement Density measurement Standards photovoltaic cells Amorphous silicon crystalline silicon heterojunctions |
| Content Type | Text |
| Resource Type | Article |
| Subject | Condensed Matter Physics Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering |
National Digital Library of India (NDLI) is a virtual repository of learning resources which is not just a repository with search/browse facilities but provides a host of services for the learner community. It is sponsored and mentored by Ministry of Education, Government of India, through its National Mission on Education through Information and Communication Technology (NMEICT). Filtered and federated searching is employed to facilitate focused searching so that learners can find the right resource with least effort and in minimum time. NDLI provides user group-specific services such as Examination Preparatory for School and College students and job aspirants. Services for Researchers and general learners are also provided. NDLI is designed to hold content of any language and provides interface support for 10 most widely used Indian languages. It is built to provide support for all academic levels including researchers and life-long learners, all disciplines, all popular forms of access devices and differently-abled learners. It is designed to enable people to learn and prepare from best practices from all over the world and to facilitate researchers to perform inter-linked exploration from multiple sources. It is developed, operated and maintained from Indian Institute of Technology Kharagpur.
Learn more about this project from here.
NDLI is a conglomeration of freely available or institutionally contributed or donated or publisher managed contents. Almost all these contents are hosted and accessed from respective sources. The responsibility for authenticity, relevance, completeness, accuracy, reliability and suitability of these contents rests with the respective organization and NDLI has no responsibility or liability for these. Every effort is made to keep the NDLI portal up and running smoothly unless there are some unavoidable technical issues.
Ministry of Education, through its National Mission on Education through Information and Communication Technology (NMEICT), has sponsored and funded the National Digital Library of India (NDLI) project.
| Sl. | Authority | Responsibilities | Communication Details |
|---|---|---|---|
| 1 | Ministry of Education (GoI), Department of Higher Education |
Sanctioning Authority | https://www.education.gov.in/ict-initiatives |
| 2 | Indian Institute of Technology Kharagpur | Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project | https://www.iitkgp.ac.in |
| 3 | National Digital Library of India Office, Indian Institute of Technology Kharagpur | The administrative and infrastructural headquarters of the project | Dr. B. Sutradhar bsutra@ndl.gov.in |
| 4 | Project PI / Joint PI | Principal Investigator and Joint Principal Investigators of the project |
Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon |
| 5 | Website/Portal (Helpdesk) | Queries regarding NDLI and its services | support@ndl.gov.in |
| 6 | Contents and Copyright Issues | Queries related to content curation and copyright issues | content@ndl.gov.in |
| 7 | National Digital Library of India Club (NDLI Club) | Queries related to NDLI Club formation, support, user awareness program, seminar/symposium, collaboration, social media, promotion, and outreach | clubsupport@ndl.gov.in |
| 8 | Digital Preservation Centre (DPC) | Assistance with digitizing and archiving copyright-free printed books | dpc@ndl.gov.in |
| 9 | IDR Setup or Support | Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops | idr@ndl.gov.in |
|
Loading...
|