NDLI: Electron Trap Transformation Under Positive-Bias Temperature Stressing

Content Provider	IEEE Xplore Digital Library
Author	Gao, Y. Ang, D.S. Bersuker, G. Young, C.D.
Copyright Year	1980
Abstract	Electron detrapping in the TiN/HfO₂ gate n-MOSFET under dynamic positive-bias temperature instability (PBTI) is examined. Similar to hole detrapping under dynamic negative-bias temperature instability (NBTI), electron detrapping per relaxation cycle is a constant under a low oxide stress field (~ 5.5 MV/cm), independent of the number of times the transistor is stressed and relaxed, and it progressively decreases with the number of stress/relaxation cycles at a higher oxide stress field (~7 MV/cm). Analysis shows that the decrease is due to a portion of the electron trap states being transformed into deeper levels, thereby increasing the emission time of the trapped electrons. However, unlike hole detrapping, the decrease in electron detrapping is not accompanied by a correlated increase in the stress-induced leakage current, and it can be reversed with a moderate negative gate voltage. These differences from NBTI suggest that distinct defects are active under PBTI.
Sponsorship	IEEE Electron Devices Society
Starting Page	351
Ending Page	353
Page Count	3
File Size	332744
File Format	PDF
ISSN	07413106
Volume Number	34
Issue Number	3
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2013-01-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Electron traps Stress Logic gates High K dielectric materials Hafnium compounds MOSFET circuits oxide-trapped charge Bias temperature instability (BTI) electron traps high- $k$/metal gate stack
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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