NDLI: Effect of Interface States on the Performance of Antimonide nMOSFETs

Content Provider	IEEE Xplore Digital Library
Author	Ali, A. Madan, H. Barth, M.J. Boos, J.B. Bennett, B.R. Datta, S.
Copyright Year	1980
Abstract	Antimonide (Sb) quantum-well MOSFETs are demonstrated with an integrated high- κ dielectric (1-nm Al₂O₃ /10-nm HfO₂). The effect of interface trap density D_it on the dc drive current and transconductance gm is studied in detail using split C-V/G -V, pulsed I -V, and radio-frequency measurements. Pulsed I-V measurements show improved on current, transconductance, and subthreshold slope due to reduced charge trapping in the dielectric at high frequencies. The long-channel Sb nMOSFET exhibits effective electron mobility of 6000 cm²/V·s at high field (2 × 10¹²/cm² of charge density Ns), which is 15× higher than Si NMOS inversion layer mobility, and one of the highest values reported for III-V MOSFETs. The short-channel Sb nMOSFET (LG = 150 nm) exhibits a cutoff frequency fT of 120 GHz, an fT × LG product of 18 GHz·μm , and a source-side injection velocity v_eff of 2.7 × 10⁷ cm/s at a drain bias V_DS of 0.75 V and a gate overdrive of 0.6 V.
Sponsorship	IEEE Electron Devices Society
Starting Page	360
Ending Page	362
Page Count	3
File Size	770041
File Format	PDF
ISSN	07413106
Volume Number	34
Issue Number	3
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2013-01-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Dielectrics MOSFETs Current measurement Radio frequency Pulse measurements Logic gates interface states Antimonide MOSFET high-$\kappa$ dielectric InAsSb
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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Enhancement-Mode Antimonide Quantum-Well MOSFETs With High Electron Mobility and Gigahertz Small-Signal Switching Performance

Experimental Determination of Quantum and Centroid Capacitance in Arsenide–Antimonide Quantum-Well MOSFETs Incorporating Nonparabolicity Effect

Improved interface quality and charge-trapping characteristics of MOSFETs with high-/spl kappa/ gate dielectric

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Electrical Characterization of Leaky Charge-Trapping High- $kappa$ MOS Devices Using Pulsed $Q$– $V$

Charge Pumping Measurements on Differently Passivated Lateral 4H-SiC MOSFETs

Interface States Beyond Band Gap and Their Impact on Charge Carrier Mobility in MOSFETs

Small-Signal Response of Inversion Layers in High-Mobility $hbox{In}_{0.53}hbox{Ga}_{0.47}hbox{As}$ MOSFETs Made With Thin High- $kappa$ Dielectrics

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Effect of Interface States on the Performance of Antimonide nMOSFETs

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