NDLI: Ultralow-Voltage Solution-Processed Organic Transistors With Small Gate Dielectric Capacitance

Content Provider	IEEE Xplore Digital Library
Author	Linrun Feng Wei Tang Xiaoli Xu Qingyu Cui Xiaojun Guo
Copyright Year	1980
Abstract	In this letter, ultralow-operation-voltage (<; 2 V) solution-processed organic thin-film transistors were achieved at small gate dielectric capacitance of only 12.2 nF/cm² in the bottom-gate bottom-contact configuration. In the devices, 6,13-bis(triisopropylsilylethynyl)-pentacene blended with polystyrene was used as the channel layer, and ultraviolet cross-linked polyvinyl alcohol was used as the gate dielectric layer. The maximum processing temperature was 100^°C. The devices showed promising performance with a mobility value of about 1.0 cm²/( V·s), a subthreshold swing of about 100 mV/dec, and negligible hysteresis. The mechanism of achieving such a low operation voltage without needing large gate dielectric capacitance for the devices was discussed.
Sponsorship	IEEE Electron Devices Society
Starting Page	129
Ending Page	131
Page Count	3
File Size	313437
File Format	PDF
ISSN	07413106
Volume Number	34
Issue Number	1
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2013-01-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Logic gates Dielectrics Organic thin film transistors Capacitance Semiconductor device measurement ultralow voltage Low temperature organic thin film transistors (OTFTs) solution processed
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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