NDLI: Electrical and Reliability Investigation of Cu TSVs With Low-Temperature Cu/Sn and BCB Hybrid Bond Scheme

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IEEE Electron Device Letters publication information

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Electrical and Reliability Investigation of Cu TSVs With Low-Temperature Cu/Sn and BCB Hybrid Bond Scheme

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IEEE Electron Devices Society Meetings Calendar for 2012 (As of 11/15/2012)

IEEE Electron Device Letters information for authors

Special Issue on GaN Electronic Devices

IEEE Foundation

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Electrical and Reliability Investigation of Cu TSVs With Low-Temperature Cu/Sn and BCB Hybrid Bond Scheme

Content Provider	IEEE Xplore Digital Library
Author	Yao-Jen Chang Cheng-Ta Ko Kuan-Neng Chen
Copyright Year	1980
Abstract	A wafer-level 3-D integration scheme using Cu through-silicon vias (TSVs) and fine-pitch Cu/Sn-BCB hybrid bonding was developed and investigated with electrical characterization and reliability assessment. The hybrid bonding could be achieved below 250 °C. Low Kelvin resistance and stable daisy chain resistance were achieved in 5- and 10- μm TSV test structures across the whole wafer. Without obvious deterioration in reliability test results, the integrated Cu TSV and hybrid bond scheme can be potentially designed for 3-D integration applications.
Sponsorship	IEEE Electron Devices Society
Starting Page	102
Ending Page	104
Page Count	3
File Size	405264
File Format	PDF
ISSN	07413106
Volume Number	34
Issue Number	1
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2013-01-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Bonding Resistance Tin Through-silicon vias Semiconductor device reliability Kelvin 3-D integration Hybrid bonding through-silicon via (TSV)
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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