NDLI: Dual-Carrier High-Gain Low-Noise Superlattice Avalanche Photodiodes

Content Provider	IEEE Xplore Digital Library
Author	Jun Huang Banerjee, K. Ghosh, S. Hayat, M.M.
Copyright Year	1963
Abstract	In this paper, novel avalanche photodiode structures with alternate carrier multiplication nanometer regions, placed next to a wider electron multiplication region, to create dual-carrier feedback systems, are proposed. Gain and excess noise factor of these structures are calculated based on the dead space multiplication theory under uniform electric field. In addition, the equivalent impact ionization ratios are derived and compared. It is observed that the proposed structures can generate much higher gain compared with conventional pure electron multiplication structures under the same electric field without severely degrading the excess noise quality. Excess noise is further optimized with careful adjustment of thin multiplication regions' thicknesses. These high-gain structures can operate under low-bias (<; 5 V) conditions, making it possible to integrate infrared avalanche photodiodes (APDs) directly into silicon read-out circuits. In this paper, type-II mid-wavelength infrared InAs/GaSb strained layer superlattice is used for simulation. However, the concept of dual-carrier APDs, with carrier feedback to generate high gain and control of excess noise through confining impact ionization in thin layers, is general and can also be applied to other wavelength APDs with different materials and thicknesses. Type II InAs/GaSb strain layer superlattice allows for versatile band structure design leading to impact ionization coefficient engineering.
Sponsorship	IEEE Electron Devices Society
Starting Page	2296
Ending Page	2301
Page Count	6
File Size	491175
File Format	PDF
ISSN	00189383
Volume Number	60
Issue Number	7
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2013-07-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	mean gain Avalanche photodiode (APD) dead space multiplication theory excess noise InAs/GaSb superlattice initial-energy effect
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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Multiplication gain and excess noise factor in double heterojunction avalanche photodiodes

Discrimination of Photon- and Dark-Initiated Signals in Multiple Gain Stage APD Photoreceivers

Investigating the Statistics of the Random Gain in Avalanche Photodiodes Using a Soft Dead Space Model

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