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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Lianqiao Yang Zunmiao Chen Jianhua Zhang Li, A.G. |
| Copyright Year | 1988 |
| Abstract | In this paper, a novel super large metal organic chemical vapor deposition reactor used for epitaxial growth of gallium nitride (GaN) thin film is designed and characterized. In this novel design, three layers of circular slits located on the periphery of reactor are used as the inlets. The outlet is located at the center of the reactor. In this design, the converging effects of gas flow in the radial direction could counterbalance the depletion of metal organic source during the GaN deposition. Therefore, uniform film thickness could be obtained. Besides, the spray board with circular slits located between top and middle inlets is used to help obtain the uniform flow distribution and sharp temperature gradient. The numerical simulation results show that even if in so large reactor (with the diameter of bigger than 1 m) all the field distributions are in an acceptable range in low vacuum degree. Controllable trimethylgallium distribution could be obtained by changing of the flow velocity and mass fractions of various species. |
| Sponsorship | IEEE Electron Devices Society IEEE Components, Packaging, and Manufacturing Technology Society IEEE Reliability Society IEEE Solid-State Circuits Society |
| Starting Page | 16 |
| Ending Page | 18 |
| Page Count | 3 |
| File Size | 310386 |
| File Format | |
| ISSN | 08946507 |
| Volume Number | 25 |
| Issue Number | 1 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2012-02-01 |
| Publisher Place | U.S.A. |
| Access Restriction | One Nation One Subscription (ONOS) |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Inductors MOCVD Gallium nitride Temperature distribution Light emitting diodes Epitaxial growth numerical simulation GaN light-emitting diodes metal organic chemical vapor deposition (MOCVD) |
| Content Type | Text |
| Resource Type | Article |
| Subject | Industrial and Manufacturing Engineering Condensed Matter Physics Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering |
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