NDLI: Impact of Plasma-Assisted Atomic-Layer-Deposited Gate Dielectric on Graphene Transistors

Content Provider	IEEE Xplore Digital Library
Author	Nayfeh, O.M. Marr, T. Dubey, M.
Copyright Year	1980
Abstract	We report for the first time on graphene transistors that incorporate a remote plasma-assisted atomic-layer-deposited Al₂O₃ gate dielectric that is directly deposited to chemical-vapor-deposited monolayer graphene at 100°C. Following dielectric formation, atomic force microscopy and Raman measurements show apparently uniform conformal coverage and retention of a nearly intact film with a slightly increased level of disorder and some signs of additional doping. Using this process, 3-μm gate length transistors with sub-10-nm gate insulator thickness are constructed, and electrical measurements demonstrate a drive current of 0.6 A/mm and a peak transconductance in excess of 90 mS/mm with V_gs = 0 V and V_ds = 1 V, which is greatly improved over coprocessed devices with SiO₂ interfacial layer with the same bias. With optimization, the plasma-assisted ALD of high-k dielectrics to graphene may potentially be useful for the design of future graphene-based technology.
Sponsorship	IEEE Electron Devices Society
Starting Page	473
Ending Page	475
Page Count	3
File Size	304244
File Format	PDF
ISSN	07413106
Volume Number	32
Issue Number	4
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2011-04-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Dielectrics Plasma measurements Logic gates Dielectric measurements Transistors Doping Transconductance transistors Graphene plasma-assisted atomic layer deposition (ALD)
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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