NDLI: Packaging Technology for Electronic Applications in Harsh High-Temperature Environments

Content Provider	IEEE Xplore Digital Library
Author	Hagler, P. Henson, P. Johnson, R.W.
Copyright Year	1982
Abstract	Silicon-on-insulator (SOI) integrated circuits have been demonstrated for use at temperatures up to 300 ^°C. However, to build functional electronics, multiple devices must be interconnected to provide the desired functionality. A system-in-package approach has been developed using thick-film technology on Si₃N₄ ceramic substrates. Si₃N₄ has a near coefficient-of-thermal-expansion match to Si and a higher flexural modulus than Al₂O₃, which is commonly used for thick-film applications. The conductor metallization is Au. For 300 ^°C operation, eutectic Au-Ge die attach was used with a Ti/Ti:W/Au backside die metallization. After 3000 h at 325 °C, the mean die shear strength decreased from 3.96 to 3.33 kg/mm², a decrease of only 16%. Formation of Au-Si-Ge ternary eutectic (melting point 326 °C) was observed and limits the use of Au-Ge die attach to 300 °C. SOI dies typically have Al wire bond pads that are not compatible with Au thermosonic wire bonding for high-temperature applications. Two plating processes have been examined: electroless Ni/immersion Au/electroless Au and electroless Ni/electroless Pd/immersion Au. The plating processes provide a barrier layer (Ni) and a wire-bondable finish (Au or Pd-Au) over the Al wire bond pads. After 10 000 h at 300 °C, the wire pull force for the Ni/Au samples decreased by ~30% due to annealing of the Au wire, while the ball shear force increased by ~35%. The daisy-chain electrical resistance remained relatively constant. For the Ni-Pd-Au samples, after 2000 h at 320 °C, the ball shear force remained constant or increased slightly, the wire pull force decreased by ~25% due to annealing of the Au wire, and the daisy-chain resistance remained relatively constant. After 3000 h, however, cratering of the Si wire bond pad was observed corresponding to some first bond pad lifts and increased daisy-chain resistance. Optimization of the wire-bonding parameters for bonding to the harder Ni/Pd/Au bond pad is required to eliminate cratering.
Sponsorship	IEEE Industrial Electronics Society
Starting Page	2673
Ending Page	2682
Page Count	10
File Size	1472925
File Format	PDF
ISSN	02780046
Volume Number	58
Issue Number	7
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2011-07-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Electronics packaging Temperature Gold Wire Bonding Silicon on insulator technology Integrated circuit technology Thick films Metallization Microassembly wire bonding Die attach harsh-environment electronics high-temperature packaging silicon nitride
Content Type	Text
Resource Type	Article
Subject	Control and Systems Engineering Electrical and Electronic Engineering Computer Science Applications

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1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
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4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
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9	IDR Setup or Support	Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops	idr@ndl.gov.in

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