NDLI: Trade-Offs Between RF Performance and Total-Dose Tolerance in 45-nm RF-CMOS

Content Provider	IEEE Xplore Digital Library
Author	Arora, R. En Xia Zhang Seth, S. Cressler, J.D. Fleetwood, D.M. Schrimpf, R.D. Rosa, G.L. Sutton, A.K. Nayfeh, H.M. Freeman, G.
Copyright Year	1963
Abstract	The hot carrier and ionizing radiation responses of 45-nm SOI RF nMOSFETs are investigated. Devices with “tight” source/drain (S/D) contact spacing have improved RF performance but degraded hot carrier reliability and radiation tolerance. Devices with “loose” gate finger-to-gate finger spacing have improved RF performance and also improved hot carrier and radiation tolerance. The effects of finger width on the hot carrier stress and ionizing radiation degradation of strained silicon-on-insulator RF MOSFETs are also investigated. Enhanced degradation is observed for devices with wide finger widths and is attributed to the greater channel-region mechanical stress induced impact ionization. This result is contrary to the previous studies which showed that narrow channel width devices should exhibit greater damage. Taken together, these results have serious consequences for RF circuits that require large widths for sufficient RF gain. Finally, devices with symmetric halo doping are observed to exhibit greater total-dose degradation than devices with asymmetric halo doping.
Sponsorship	IEEE Nuclear and Plasma Sciences Society Computer Applications in Nuclear and Plasma Sciences (CANPS) Lawrence Berkeley Lab. Lawrence Livermore Nat. Lab. APS College of William and Mary Continuous Electron Beam Accelerator Facility NASA Defence Nuclear Agency Sandia National Laboratories Jet Propulsion Laboratory Brookhaven Nat. Lab. Lawrence Livermore Nat. Lab IEEE/NPPS Radiat. Effects Committee Defence Nuclear Agency/DoD Sandia National Laboratories/DOE Jet Propulsion Laboratory/NASA Phillips Lab./DoD
Starting Page	2830
Ending Page	2837
Page Count	8
File Size	1538332
File Format	PDF
ISSN	00189499
Volume Number	58
Issue Number	6
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2011-12-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Logic gates Radio frequency Hot carriers Performance evaluation Degradation Reliability Silicon on insulator technology TID CA-CA $f_{\rm max}$ $f_{T}$ HCI nFET OIP3 P1dB RFCMOS SOI
Content Type	Text
Resource Type	Article
Subject	Nuclear and High Energy Physics Electrical and Electronic Engineering Nuclear Energy and Engineering

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4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
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Impact of Source/Drain contact and gate finger spacing on the RF reliability of 45-nm RF nMOSFETs

Impact of Technology Scaling in sub-100 nm nMOSFETs on Total-Dose Radiation Response and Hot-Carrier Reliability

An Investigation of Single Event Transient Response in 45-nm and 32-nm SOI RF-CMOS Devices and Circuits

Operating Voltage Constraints in 45-nm SOI nMOSFETs and Cascode Cores

Channel Hot Carrier Stress on Irradiated 130-nm NMOSFETs

Impact of body tie and Source/Drain contact spacing on the hot carrier reliability of 45-nm RF-CMOS

Irradiation and Temperature Effects for a 32 nm RF Silicon-on-Insulator CMOS Process

Impact of Proton Irradiation on the RF Performance of 65 nm SOI CMOS Technology

RF performance vulnerability to hot carrier stress and consequent breakdown in low power 90 nm RFCMOS

Trade-Offs Between RF Performance and Total-Dose Tolerance in 45-nm RF-CMOS

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