NDLI: InGaAs Tunneling Field-Effect-Transistors With Atomic-Layer-Deposited Gate Oxides

Content Provider	IEEE Xplore Digital Library
Author	Zhao, H. Chen, Y. Wang, Y. Zhou, F. Xue, F. Lee, J.
Copyright Year	1963
Abstract	In_0.7Ga_0.3As tunneling field-effect-transistors (TFETs) using the p⁺ (6 nm)/undoped (6 nm) tunneling junction with 5-nm HfO₂ gate oxides have been demonstrated with an on-current of 50 μA/μm and a minimum subthreshold swing (SS) of 86 mV/dec. The impacts of tunneling junction structures on TFETs' performance have been investigated. It has been found that In_0.7Ga_0.3As TFETs with the p⁺ (4 nm)/undoped (8 nm) tunneling junction provide ~ 80% higher on -currents than In_0.7Ga_0.3As TFETs with the p⁺ (6 nm)/undoped (6 nm) junction, and In_0.7Ga_0.3As TFETs exhibit much higher on-currents than In_0.53Ga_0.47As TFETs. Different atomic-layer-deposited gate oxides have been used, and Al₂O₃/HfO₂ bilayer gate oxides effectively improve the SS compared with HfO₂ single gate oxide. The effects of equivalent oxide thickness scaling and operating temperatures on the on-current, the SS, and the gate-bias-dependent Esaki diode behavior have been also investigated.
Sponsorship	IEEE Electron Devices Society
Starting Page	2990
Ending Page	2995
Page Count	6
File Size	844445
File Format	PDF
ISSN	00189383
Volume Number	58
Issue Number	9
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2011-09-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Logic gates Junctions Tunneling Indium gallium arsenide Aluminum oxide Substrates Photonic band gap tunneling field-effect-transistors (TFETs) $\hbox{Al}_{2}\hbox{O}_{3}$ atomic layer deposition (ALD) band-to-band tunneling $\hbox{HfO}_{2}$ InGaAs low $V_{dd}$ low-power
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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