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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Qiang Cui Chia-Shih Cheng Liou, J.J. Hsien-Chin Chiu |
| Copyright Year | 1963 |
| Abstract | Electrostatic discharge (ESD) protection structures in the GaAs technology are commonly constructed using enhancement-mode single-gate (SG) pseudomorphic high-electron mobility transistor (pHEMT) devices. This paper develops an improved ESD protection clamp based on a novel multigate pHEMT. With approximately the same layout area, the proposed ESD protection clamp can carry an ESD current three times higher than the conventional SG pHEMT clamp under the human body model stress. Moreover, the new ESD clamp shows promising results when characterized under the charged device model stress. The parasitic capacitance of the new ESD clamp is also measured to assess its suitability for high-frequency ESD applications. |
| Sponsorship | IEEE Electron Devices Society |
| Starting Page | 2974 |
| Ending Page | 2980 |
| Page Count | 7 |
| File Size | 1027544 |
| File Format | |
| ISSN | 00189383 |
| Volume Number | 58 |
| Issue Number | 9 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2011-09-01 |
| Publisher Place | U.S.A. |
| Access Restriction | One Nation One Subscription (ONOS) |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Clamps Electrostatic discharge PHEMTs Logic gates Schottky diodes Stress Integrated circuit modeling human body model (HBM) Charged device model (CDM) electrostatic discharge (ESD) high-electron mobility transistor (HEMT) |
| Content Type | Text |
| Resource Type | Article |
| Subject | Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering |
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