NDLI: High-Electron-Mobility <formula formulatype=inline><tex Notation=TeX>$hbox{Ge/GeO}_{2}$</tex> </formula> n-MOSFETs With Two-Step Oxidation

Content Provider	IEEE Xplore Digital Library
Author	Choong Hyun Lee Nishimura, T. Nagashio, K. Kita, K. Toriumi, A.
Copyright Year	1963
Abstract	We propose a two-step oxidation with high-pressure oxidation and low-temperature oxygen annealing to form ideal Ge/GeO₂ stacks based on thermodynamic and kinetic control. The capacitance-voltage (C-V) characteristics of Ge/GeO₂ MISCAPs with two-step oxidation revealed significant improvements of electrical properties, and the interface states density (Dit) estimated with a low-temperature conductance method that was below 10¹¹ eV^-1 cm^-2 near the midgap. On the basis of our understanding of Ge oxidation, we demonstrated very high electron mobility in Ge n-channel metal-oxide-semiconductor field-effect transistors (MOSFETs) that exceeded the universal mobility in Si-MOSFETs. The peak electron mobility in Ge n-MOSFETs with the two-step oxidation was 1100 cm²/V · s in the Al/GeO₂/Ge stack. This was achieved by taking care of the Ge/GeO₂ channel interface. Since we clarified that mobility was still limited by the remaining extrinsic scattering sources, the present results promise much higher performance Ge complementary metal-oxide-semiconductor.
Sponsorship	IEEE Electron Devices Society
Starting Page	1295
Ending Page	1301
Page Count	7
File Size	1052784
File Format	PDF
ISSN	00189383
Volume Number	58
Issue Number	5
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2011-05-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Oxidation MOSFET circuits Silicon Surface treatment Scattering Electron mobility Logic gates surface orientation effects Germanium high-pressure oxidation (HPO) metal–oxide–semiconductor field-effect transistors (MOSFETs) mobility
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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