NDLI: Experimental Validation of Mixed Electromechanical and Electromagnetic Modeling of RF-MEMS Devices Within a Standard IC Simulation Environment

Content Provider	IEEE Xplore Digital Library
Author	Iannacci, J. Gaddi, R. Gnudi, A.
Copyright Year	1992
Abstract	The validity and applicability of a high-level simulation approach of radio-frequency microelectromechanical-system (RF-MEMS) devices, based on a library of analytical compact models of elementary MEMS components, are investigated through an extensive comparison between simulation results and measurements of some representative devices (variable capacitors and series ohmic switches). The in-house developed simulation tool is implemented in a standard IC simulation environment supporting behavioral description capabilities. The devices are built in a silicon substrate technology with suspended gold membranes. We analyze the mechanical, electrical, and RF response of the devices. The RF behavior is modeled by extracting a lumped element network from measured S-parameters (scattering-parameters) to account for parasitic effects and by wrapping this network around the intrinsic MEMS device simulated with the compact models. We show that an accuracy within 5% is obtained in all considered physical domains and conditions, provided that some effective parameters (including the residual air gap in the actuated state and the RF parasitic elements) are properly extracted from measurements and accounted for in the simulations. The main factors limiting the model's predictive capability are due to process nonidealities, such as plate bending due to residual stress gradient, oxide charging, surface roughness, and suspended membrane thickness variations, rather than for instance in-plane geometric process variations.
Sponsorship	IEEE Electron Devices Society American Society of Mechanical Engineering (ASME)
Starting Page	526
Ending Page	537
Page Count	12
File Size	2057225
File Format	PDF
ISSN	10577157
Volume Number	19
Issue Number	3
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2010-06-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Integrated circuit modeling Electromagnetic modeling Radiofrequency microelectromechanical systems Radio frequency Analytical models Biomembranes Libraries Micromechanical devices Electromagnetic measurements Capacitors RF microelectromechanical systems (RF-MEMS) Compact modeling mixed-domain simulation radio-frequency (RF) devices
Content Type	Text
Resource Type	Article
Subject	Mechanical Engineering Electrical and Electronic Engineering

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
6	Contents and Copyright Issues	Queries related to content curation and copyright issues	content@ndl.gov.in
7	National Digital Library of India Club (NDLI Club)	Queries related to NDLI Club formation, support, user awareness program, seminar/symposium, collaboration, social media, promotion, and outreach	clubsupport@ndl.gov.in
8	Digital Preservation Centre (DPC)	Assistance with digitizing and archiving copyright-free printed books	dpc@ndl.gov.in
9	IDR Setup or Support	Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops	idr@ndl.gov.in

Compact RF Model for Transient Characteristics of MEMS Capacitive Switches

Accurate Simulation of RF MEMS VCO performance including phase noise

An above IC MEMS RF switch

CMOS-Integrated RF MEMS Resonators

Study of intermodulation in RF MEMS variable capacitors

A MEMS reconfigurable DGS resonator for K-band applications

High-Reliability Miniature RF-MEMS Switched Capacitors

RF-MEMS switches for reconfigurable integrated circuits

A Novel Membrane Process for RF MEMS Switches

Experimental Validation of Mixed Electromechanical and Electromagnetic Modeling of RF-MEMS Devices Within a Standard IC Simulation Environment

Similar Documents

Compact RF Model for Transient Characteristics of MEMS Capacitive Switches

Accurate Simulation of RF MEMS VCO performance including phase noise

An above IC MEMS RF switch

CMOS-Integrated RF MEMS Resonators

Study of intermodulation in RF MEMS variable capacitors

A MEMS reconfigurable DGS resonator for K-band applications

High-Reliability Miniature RF-MEMS Switched Capacitors

RF-MEMS switches for reconfigurable integrated circuits

A Novel Membrane Process for RF MEMS Switches

Experimental Validation of Mixed Electromechanical and Electromagnetic Modeling of RF-MEMS Devices Within a Standard IC Simulation Environment