NDLI: Effect of Substrate Contact Shape and Placement on RF Characteristics of 45 nm Low Power CMOS Devices

Content Provider	IEEE Xplore Digital Library
Author	Gogineni, U. Hongmei Li del Alamo, J.A. Sweeney, S.L. Jing Wang Jagannathan, B.
Copyright Year	1966
Abstract	The substrate resistance of 45 nm CMOS devices shows a strong dependence on the distance between the device edge and the substrate contact ring, as well as on the number of sides that the surrounding ring contacts the substrate. We find that the unilateral gain is impacted by the substrate resistance (R_sx) through the gate-body capacitance feedback path at low to medium frequencies (< 20 GHz). At mm-wave frequencies, the unilateral power gain is affected by R_sx through the drain-body capacitance pole, and the unilateral power gain deviates from the ideal -20 dB/dec slope. Within the range of designs that have been studied, the impact of substrate resistance on f_T, maximum available gain, high frequency noise and power characteristics of the devices is minimal.
Sponsorship	IEEE Solid-State Circuits Society IEEE Electron Devices Society IEEE Circuits and Systems Society Japan Society of Applied Physics (JSAP) IEEE Microwave Theory and Techniques Society IEEE San Francisco Section Bay Area Council Univ. PA IEEE
Starting Page	998
Ending Page	1006
Page Count	9
File Size	1478762
File Format	PDF
ISSN	00189200
Volume Number	45
Issue Number	5
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2010-05-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Radio frequency Shape measurement Fingers Electrical resistance measurement Performance evaluation Contact resistance Capacitance Circuit noise Semiconductor device modeling Cutoff frequency unilateral gain Maximum oscillation frequency noise power gain RF CMOS substrate resistance
Content Type	Text
Resource Type	Article
Subject	Electrical and Electronic Engineering

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